Epitaxial growth of atomic-scale smooth Ir electrode films on MgO buffered Si(100) substrates by PLD

Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 films on different epitaxial bottom electrodes buffered Si substrates

“…The detailed preparation processes about bottom electrode/MgO/TiN/ Si heterostructures have been reported elsewhere [18][19][20][21]. The prepared bottom electrodes exhibit atomic smooth surface and high electrical conductivity.…”

“…In this work, various epitaxial thin films (Pt, Ir and LSCO) grown on MgO/Si substrates [18][19][20][21] were selected as bottom electrodes for subsequent deposited PMNT films. Through careful optimization of growth conditions, completely (0 0 1)-oriented 0.7 Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 films have been successfully prepared on Irand LSCO-bottom electrodes buffered Si substrates.…”

All-epitaxial growth of single-crystalline Ba0.6Sr0.4TiO3/Ir/MgO/Si heterostructures

“…The details of epitaxial growth of Ir/MgO bilayer on Si(1 0 0) substrates were described in Ref. [10]. Through ablating a stoichiometric single-phase target, BST thin films with a thickness of 300 nm were grown by pulsedlaser deposition at a substrate temperature of 873 K and an O 2 partial pressure of 0.4 mTorr.…”

“…Metal electrodes are extensively used in the semiconductor industry for its chemical stability and convenience of processing. It has been reported that the crystalline structure of iridium (Ir) electrode layers is denser than that of platinum (Pt) electrode layers [10], which could optimize the interfacial conditions and so greatly enhance device fatigue resistance. Therefore, epitaxial growth of BST thin films on Ir/MgO-buffered Si substrates will be proved more practical and valuable in terms of integration with silicon and device fabrication.…”

Interplay between Defect Structure and Catalytic Activity in the Mo10−xVxOy Mixed‐Oxide System

“…However, microstructural changes and surface morphology degradation of Pt thin films limits its applicability as a growth template, and the chemical dissimilarity with oxides has been reported detrimental to important device figures of merits, such as fatigue of the switchable ferroelectric polarization and endurance performance 17. Ir has been suggested as an alternative solution with even lower resistivities ( a = 3.84 Å, ρ 300K = 5 × 10 −6 Ω cm) 18, 19. The poor fatigue performance of devices with metallic Ir was overcome by forming hybrid Ir/IrO 2 electrodes (IrO 2 ρ 300K = 5 × 10 −5 Ω cm);20, 21 however, the poor structural match of rutile IrO 2 renders this approach unsuitable for functional oxide thin films, multilayers and superlattices with perovskite and related structures.…”