Epitaxial Growth of Chalcopyrite-Type CuInS₂ Films on GaAs(001) Substrates by Evaporation Method with Elemental Sources

Abstract

We study quark and strange quark matter in the context of general relativity. For this purpose, we solve Einstein's field equations for quark and strange quark matter in spherical symmetric space-times. We analyze strange quark matter for the different equations of state (EOS) in the spherical symmetric space-times, thus we are able to obtain the space-time geometries of quark and strange quark matter. Also, we discuss the features of the obtained solutions. The obtained solutions are consistent with the results of Brookhaven Laboratory, i.e. the quark-gluon plasma has a vanishing shear (i.e. quark-gluon plasma is perfect).

Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

“…A few reports are available for the growth of other I-III-VI 2 chalcopyrite-type semiconductors. [20][21][22] Different surface phases were detected in the growth under different Cu/In ratios for CuInS 2 20) and CuInSe 2 . 21) However, no dynamic study during growth has been reported in these materials.…”