Growth of CuGaSe₂Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy

Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy

“…2. Previously, we have reported the pole figure results of CGS on GaAs (001) [9], similarly it confirms that there are no other microstructures in the epitaxial CGS layers.…”

“…During cation deposition, Cuþ Ga/In atoms have enough time to find their preferable nucleation sites and able to produce well-ordered and smooth surface layer [11][12][13]. Indeed, MEE has been proved useful for producing high mobility CGS and CIS compared with those grown by conventional MBE [9]. Undoped CGS with hole concentration of 1 Â 10 17 =cm 3 shows a hole mobility higher than 200 cm 2 /Vs at room temperature.…”

“…When the migration enhanced epitaxy (MEE) deposition sequence is applied instead of simultaneous deposition of conventional MBE, the intense RHEED patterns are conserved throughout the growth. Resulting CGS layers exhibit hole mobility as high as 220 cm 2 /Vs at 300 K and 2000 cm 2 /Vs at 100 K [9,10]. Therefore, we have adopted the MEE deposition sequence where cations (Cu and Ga) and anions (Se) are alternately deposited.…”

Single-crystal Cu(In,Ga)Se2solar cells grown on GaAs substrates

“…Fujita et al investigated the epitaxial growth of CGS on GaAs(001) substrates with different Cu compositions. [18][19][20] Under Cu-rich growth conditions, the segregation of Cu 2 Se on CGS took place, and there was a high density of voids between the CGS layers and the GaAs substrates because the Ga atoms in GaAs were drawn out by excess Cu atoms. 19) These studies on the epitaxial growth of CIGS layers are very important for understanding the growth mechanism of highly crystalline CIGS layers; however, there are few reports on the conversion efficiencies obtained using single-crystal CIGS layers.…”

Structural characterization of AgGaTe2 layers grown on a‐ and c‐sapphire substrates by a closed space sublimation method

“…1 Introduction Families of chalcopyrite I-III-VI 2 compounds are taking considerable attention in recent years [1][2][3][4]. Their fascinating optical and electrical properties, especially, allowing to tune the bandgap values of these compounds by the formation of various solid solutions and having high absorption coefficients, makes them an efficient absorber in the fabrication of thin film solar cells.…”