Epitaxial growth of highly strained antimonene on Ag(111)

Mao, Yahui; Zhang, Lifu; Wang, Huili; Shan, Huan; Zhai, Xiaofang; Hu, Zhenpeng; Zhao, Aidi; Wang, Bing

doi:10.1007/s11467-018-0757-3

Cited by 56 publications

(35 citation statements)

References 24 publications

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“…Germanene growth is similar to silicene growth via an evaporating Ge on Ag(111). [175,176] The linear dispersing feature of superstructure Brillouin zone at Г points, well match with K points of Ag (111), shows presence of Dirac cones. [35] Electronic structure observed from DFT calculations, [35] come from ordered Ag 2 Ge surface alloy because of surface hybrid bands.…”

Section: Germanene Growth On the Metallic Surface Via Bottom-up Approachsupporting

confidence: 60%

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Khan

Tareen

Wang

et al. 2020

Adv Funct Materials

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The 2D graphene (G) nanosheets (NSs) discovery is amound the foremost revolutionary incidents in materials science history. This discovery has stimulated huge attention in the study of other novel 2D materials (2DMs). This trend might be called modern day "alchemy," where the basic aim is to convert most of periodic table elements into G like 2D structures. Monoelemental, atomically thin 2DMs, called "Xenes" ("X" = group (III-VI)A elements, "ene" suffix that indicates one atom thick 2D layer of atoms) which are a newly invented family among nanomaterials. The number of predicted and experimentally synthesized 2D Xene materials of group IVA, i.e., G's siblings, has gained attention in nanosize devices. Such materials involve buckle structures that have recently been experimentally fabricated. The 2D Xene materials analog to G offer exciting potential for novel sensing applications. The group IVA Xenes, in cooperation with their ligandfunctionalized derivatives, arrange in a honeycomb lattice analogous to G but through a changeable degree of buckling. Their electronic structure ranges from trivial insulators passing via semiconductors with tunable gaps, to semimetallic, depending on substrate, chemical functionalization, and strain. In this review, different potential synthesis methods for group IVA 2D Xenes are briefly presented. A brief overview of their properties obtained theoretically and experimentally is presented, and finally their potential sensing applications are discussed.

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Section: Germanene Growth On the Metallic Surface Via Bottom-up Approachsupporting

confidence: 60%

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Khan

Tareen

Wang

et al. 2020

Adv Funct Materials

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“…It is believed that BP‐structured monolayer (α‐allotrope) can be formed in other group V elements, such as Bi (bismuthene), Sb (antimonene), or As (arsenene), and many theoretical efforts have been made to predict their structures and properties . Comparing to their β‐allotrope of hexagonal honeycomb structure that has been widely studied experimentally, it still remains challenging to fabricate the large‐scale and high‐quality monolayer α‐allotrope of these group V monoelements, even though small patches of the α‐allotrope has been observed in some mixed structures …”

mentioning

confidence: 99%

Van der Waals Heteroepitaxial Growth of Monolayer Sb in a Puckered Honeycomb Structure

Shi

Yuan

et al. 2018

Advanced Materials

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single-layered materials have been predicted and realized, such as Si, [21][22][23] Ge, [24,25] Sn, [26] B, [27,28] Hf, [29] and Te, [30] but few of them share the same crystal structure as BP.It is believed that BP-structured monolayer (α-allotrope) can be formed in other group V elements, such as Bi (bismuthene), Sb (antimonene), or As (arsenene), and many theoretical efforts have been made to predict their structures and properties. [31][32][33][34][35][36][37] Comparing to their β-allotrope of hexagonal honeycomb structure that has been widely studied experimentally, [38][39][40][41][42][43][44] it still remains challenging to fabricate the large-scale and highquality monolayer α-allotrope of these group V monoelements, [36] even though small patches of the α-allotrope has been observed in some mixed structures. [45] In this study, we successfully synthesize the large-scale and high-quality α-antimonene with puckered BP structure on the T d -WTe 2 substrate, by using molecular beam epitaxy (MBE). In our experiment, the thickness of BP-structured antimonene can be well controlled in a layer-by-layer fashion. Owing to the high quality and large scale of the Sb monolayer, it becomes possible to map the electronic band structure via quasiparticle interference (QPI) with scanning tunneling microscopy (STM). The α-antimonene exhibits a hole-doped nature with a linearly dispersed band crossing the Fermi level and a high electrical Atomically thin 2D crystals have gained tremendous attention owing to their potential impact on future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayers of α-phase Sb (α-antimonene), which shares the same puckered structure as black phosphorous, are predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, high-quality monolayerα-antimonene is successfully grown, with the thickness finely controlled. The α-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscopy, density functional theory calculations, and transport measurements, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the α-antimonene promising for future electronic applications. AntimoneneSpurred by their prospect in electronic technologies, 2D crystals have been attracting increasing attentions. As the thickness is decreased down to the single-layer limit, 2D crystals usually exhibit different electronic properties from their bulk counterparts. [1] Exotic phenomena are also expected in single-layered materials, such as the quantum spin Hall effect, [2][3][4][5][6] 2D superconductivity, [7,8] charge density wave, [9][10][11][12] or magnetism. [13,14] Following the discovery of graphene, [15,16] black phosphorus (BP) has been revived as a potential candidate for optoelectronics and field-effect transistor (FET) applications, [17][18][19][...

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“…Properties of these Sb films were poorly understood due to the strong interaction of Sb with the substrates. Recently, several groups have prepared high‐quality monolayer antimonene on PdTe 2, Ge(111), and Ag(111) substrates, by MBE. The low‐energy electron diffraction (LEED) and STM measurements show that the thickness of the monolayer β‐antimonene grown on PdTe 2 is 2.8 Å .…”

Section: Synthesis Structure and Propertymentioning

confidence: 99%

2D Elemental Nanomaterials Beyond Graphene

2019

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Graphene is a well‐known 2D material with potential applications. In recent years, 2D materials of other elements have come to the fore. These are borophene in group III, silicene, germanene and stanene in group IV and phosphorene, arsenene, antimonene and bismuthene in group V. In this article, we discuss the synthesis, structure and properties of the elemental 2D materials beyond graphene. Of the various elemental 2D materials, borophene, silicene and phosphorene are interesting in terms of stability and properties leading to possible applications. We have described potential applications of other 2D materials as well.

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Epitaxial growth of highly strained antimonene on Ag(111)

Cited by 56 publications

References 24 publications

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Van der Waals Heteroepitaxial Growth of Monolayer Sb in a Puckered Honeycomb Structure

2D Elemental Nanomaterials Beyond Graphene

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