Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

Mohapatra, Pranab K.; Ranganathan, K.; Dezanashvili, Lital; Houben, Lothar; Ismach, Ariel

doi:10.1016/j.apmt.2020.100734

Cited by 30 publications

(32 citation statements)

References 58 publications

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“…Figure a shows a schematic diagram of the CVD setup and the placement of substrate and mica pieces to create the confined areas. [ 28,37,38 ] The temperature profiles of S and MoO 3 precursors during the growth process are shown in Figure 1b. After the growth, a clear optical contrast difference in the substrate can be observed between the area of mica‐covered and mica‐uncovered regions as shown in Figure 1c.…”

Section: Resultsmentioning

confidence: 99%

Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

Mohapatra

Ranganathan

Ismach

2020

Adv Materials Inter

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for the large-scale synthesis with high crystal quality would be chemical vapor deposition (CVD). The vast majority of CVD-derived TMDCs is based on the use of metal oxide (MO) precursors as the feedstock for the desired metal (Mo, W, etc.). Such precursors have some serious drawbacks, in special low vapor pressures, forcing to be placed nearby the growth substrate to enable enough metal precursor during the growth. This is in general unwanted in a typical CVD process, as it makes very challenging to control the supply of the metal to the growth substrate and there is a significant distance-related supply dependency. [17-20] Furthermore, the MO precursor in the growth chamber reacts with the sulfur, usually from elemental S, therefore making the delivery of the metal precursor to the growth substrate hard to control. These effects are the main reason for the observed inhomogeneities in the grown films, which may include MO particles and wires, [19] multilayer regions, and vertically aligned layers. [17,20] Hence, different precursors, with higher vapor pressures, and thus more suitable for CVD growth, were proposed as well, such as metal-organic compounds, [14,21-25] which were shown to be promising. However, such precursors usually lead to smaller crystal domains and are toxic, [14,22,24] thus requiring special measures, not available in every research laboratory. Hence, despite its drawbacks, MO precursors offer a simple and nontoxic alternative for the growth of high-quality TMDC domains and layers. Nonetheless, the successful growth of 2D atomically thin semiconductors using such precursors demands the careful control of the precursor vapor concentration. One of the major drawbacks in a conventional MO-based CVD growth is the presence of excessive nucleation density, which causes the formation of MO entities prior to their sulfurization, [19] and thus multilayer and other inhomogeneities are obtained. Several approaches were suggested in order to control the metal precursor concentration and to avoid this unwanted outcome, including the use of a separate quartz tubes for the MO and chalcogen precursors, [26] the use of the so-called seed promoters, [23,27] or the use of physical barriers, [28-33] to diminish the amount of metal precursor on the growth substrate, and thus reducing by that the nucleation density and inhibiting the formation of MO nanostructures prior to their sulfurization. The use of a confined space [28-32,34] to grow a TMDC layer is a particular case of the latter. Such approach offers the possibility This study demonstrates that monolayer molybdenum disulfide (MoS 2) can be grown on selective areas of a substrate by creating isolated microcavity reactors throughout the substrate in a chemical vapor deposition (CVD) process. The obtained MoS 2 in the confined areas can be tuned from isolated triangular domains of few tens of microns to a continuous film with different thicknesses by modulating the growth parameters. In contrast, the growth on the open areas of the substrate leads to an inhom...

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Section: Resultsmentioning

confidence: 99%

Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

Mohapatra

Ranganathan

Ismach

2020

Adv Materials Inter

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“…b-In 2 Se 3 is a group IIIA-VIA atomic layered semiconducting material having a small bandgap, which has been used for developing MoS 2 hybrid photodetectors. The few layer b-In 2 Se 3 thin lms were epitaxially grown on the top of CVD-MoS 2 monolayers by Mahapatra et al 354 The b-In 2 Se 3 /MoS 2 vdW heterostructure-based photodetectors showed signicantly higher photoresponse than that of pure b-In 2 Se 3 photodetectors. The photocurrent of In 2 Se 3 /MoS 2 hybrid-based devices was found to be 1.3 Â 10 3 times higher compared with the dark current at 532 nm under laser power of 8.47 mW and the EQE value reached 5.49 Â 10 3 % under laser power of 4 mW cm À2 with applied bias.…”

Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning

confidence: 99%

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Nalwa¹

2020

RSC Adv.

269

146

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“…Several groups reported the growth of either continuous [80] or isolated triangular [60,81] In 2 Se 3 form on various substrates [82] . Most reported CVD‐grown In 2 Se 3 thin films present the α‐phase; while CVD grown β‐phase In 2 Se 3 are limited [82–84] . In this process, reactants and substrate are placed in separate temperature zones inside the furnace chamber, and one or more heated precursors vapour carried by the upstream gas flow (Figure 3(a)).…”

Section: Methods Of Synthesismentioning

confidence: 99%

“…[82] Most reported CVD-grown In 2 Se 3 thin films present the αphase; while CVD grown β-phase In 2 Se 3 are limited. [82][83][84] In this process, reactants and substrate are placed in separate temperature zones inside the furnace chamber, and one or more heated precursors vapour carried by the upstream gas flow (Figure 3(a)). Then the vapours are chemically reacted and resulting in deposition or growth of 2D In 2 Se 3 on the substrate surface.…”

Section: Chemical Vapour Depositionmentioning

confidence: 99%

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Mukherjee

Koren

2022

Israel Journal of Chemistry

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The search for ultrathin and robust ferroelectrics leads to few promising two-dimensional (2D) materials. In 2 Se 3 has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes it a potential candidate for emerging artificial intelligence, information processing and memory applications. In addition, the high optical absorption and phase-dependent visible to infrared bandgap become advantageous from optoelectronics point-of-view. This unique ferroelectric and optoelectronic coupling further leads to explore atomic-scale multifunctional devices. In this review, we summarized the progress of non-volatile memory (NVM) and photodetector devices, and their intercoupled applications using 2D In 2 Se 3 . We expect that this review will provide an insight towards the promising future of 2D ferroelectric-(opto)electronics and motivate researchers for further development towards industrial scale.

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Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

Cited by 30 publications

References 58 publications

Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

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Epitaxial growth of In2Se3 on monolayer transition metal dichalcogenide single crystals for high performance photodetectors

Cited by 30 publications

References 58 publications

Selective Area Growth and Transfer of High Optical Quality MoS2 Layers

Selective Area Growth and Transfer of High Optical Quality MoS2 Layers

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Indium Selenide (In2Se3) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications

Contact Info

Product

Resources

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Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

Selective Area Growth and Transfer of High Optical Quality MoS₂ Layers

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Indium Selenide (In₂Se₃) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications