Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition

Abstract

In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic layer deposition (PE-ALD). By systematically investigating the growth parameters, we determined the process window for crystalline InN films growth by PE-ALD. Under the optimal conditions, we compared Si (100), Al2O3 (0001), and ZnO (0001) substrates with different lattice mismatches to InN. High resolution X-ray diffraction (HR-XRD) measurements showed that we obtained the epitaxial InN thin film on the ZnO (0001) substrate, which has the smallest lattice mismatch. The crystal orientation relationship is found to be InN[0001]∥ZnO[0001] and InN[10−10]∥ZnO[10−10]. HR-XRD and high resolution transmission electron microscopy measurements revealed that the InN films are fully relaxed, and no voids or interlayer is observed at the interface. Our results show that the epitaxial growth of the InN film can be obtained by PE-ALD at low temperature.

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

“…The presence of the (0002) peak in both the 2θ-θ and GIXRD measurement, indicate that some InN grains are orientated along the c-axis whilst others are titled with respect to the c-axis. to 4H-SiC (hkil) and 6 poles to InN (10)(11). Note that the poles for 4H-SiC and InN overlap.…”

“…144 (17) 168 (15) 111(10) 0 55(11) 0 N(10) 120 (3) 120(3) 119(3) 1(1) 0(1) 0(1) C(11) 217 (17) 240 (20) 138(15) 0 99(14) 0 N(11) 133 (14) 174 (17) 153 (12) 13 (11) 33 (11) 66(12) C(13) 212 (9) 212(9) 212(9) 0(1) 0(1) 0(1) C (21) (8) 202 (8) 202(8) 0(1) 0(1) 0(1) C(24) 182 (5) 183 (5) 183(5) 0(1) -1(1) 0(1) C(18) 170 (10) 221 (11) 188(11) -85(10) -30(10) -58(7) __________________________________________________________________________ Figure S6. Enthalpy at 250°C of the decomposition paths.…”

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

“…Differential Scanning Calorimetry of 1, which shows two distinct exothermic events between 150-180 and 220-280°C. (24) 3023 (11) 1315 (13) 10813 (19) 183 (5) C (18) 37 (11) 950 (13) 7240 (20) 193 (…”

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

“…In this regard, plasma-enhanced atomic layer deposition (PE-ALD) becomes an attractive choice as it offers surface-chemistry driven atomic-scale precision material growth at low substrate temperatures. 17,[25][26][27][28][29][30][31][32] The main advantages of ALD compared to other thin lm growth techniques are sub-nanometer precision thickness control, low-temperature growth, ultimate conformality, and large-area uniformity. 33,34 To date, there have been multiple efforts towards low-temperature InN growth via PE-ALD.…”

“…33,34 To date, there have been multiple efforts towards low-temperature InN growth via PE-ALD. 17,[30][31][32][35][36][37][38][39][40][41] Initial epitaxial growth of InN at sub-300 C was achieved by plasma-enhanced atomic layer epitaxy (PE-ALE) where the lms exhibited substrate-dependent varying crystallographic orientations. 17,36 In a relatively recent study, PE-ALD of monocrystalline InN lms has also been reported at 250 C using N 2 -plasma on lower-lattice-mismatched ZnO/Al 2 O 3 substrates, where the lms were fully relaxed with no voids or interlayers at the interfaces.…”