In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic layer deposition (PE-ALD). By systematically investigating the growth parameters, we determined the process window for crystalline InN films growth by PE-ALD. Under the optimal conditions, we compared Si (100), Al2O3 (0001), and ZnO (0001) substrates with different lattice mismatches to InN. High resolution X-ray diffraction (HR-XRD) measurements showed that we obtained the epitaxial InN thin film on the ZnO (0001) substrate, which has the smallest lattice mismatch. The crystal orientation relationship is found to be InN[0001]∥ZnO[0001] and InN[10−10]∥ZnO[10−10]. HR-XRD and high resolution transmission electron microscopy measurements revealed that the InN films are fully relaxed, and no voids or interlayer is observed at the interface. Our results show that the epitaxial growth of the InN film can be obtained by PE-ALD at low temperature.

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A GaN/CH3NH3PbBr3 heterojunction was fabricated by depositing a GaN thin layer on a CH3NH3PbBr3 single crystal by plasma enhanced atomic layer deposition. The band alignment of the GaN/CH3NH3PbBr3 heterojunction was studied by x-ray photoelectron spectroscopy. The valance band offset (VBO) is directly determined to be 0.13 ± 0.08 eV. The conduction band offset is deduced from the VBO and the band gaps, which turned out to be 1.39 ± 0.12 eV. Thus, the band alignment of the GaN/CH3NH3PbBr3 heterojunction is determined to be type-I. These results show that GaN is a promising material for carrier confinement in halide perovskite based light emitting devices.

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