2017
DOI: 10.1016/j.matchemphys.2016.12.063
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Epitaxial growth of tantalum carbides by low carbon flow carburizing

Abstract: International audienceThe carburizing of tantalum samples under different carbon flow rates has highlighted the influence of the carbon flow rate on the structure of tantalum carbides. XRD analyses enabled the identification of surface structures that were revealed by optical micrographs. Four carbon flow rates were tested. The lowest carbon flow rate produced a Ta2C layer that grew epitaxially on the tantalum substrate according to the relationship: {View the MathML source101¯}Ta// View the MathML source{1¯10… Show more

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Cited by 10 publications
(1 citation statement)
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“…Among transition metal carbides, tantalum carbide (TaC) has attracted considerable attention since it has high hardness, good thermal stability, high melting temperature (3880 • C), low contact resistance, and excellent tribological performance. Based on its superior performance and promising applications in industry, nanocomposite TaC coatings have been prepared and studied by a variety of modern surface modification technologies, such as hot pressing [17], magnetron sputtering [1] [18][19] [20][21] [22] [23], in situ reaction (ISR) technique [24] [25], carburization [26] [27], pulsed laser ablation deposition [28][29] [30], chemical vapor deposition [31] [32], electrodeposition [33] and so on. Among them, one of the most widely used techniques to grow TaC films is direct current (DC) magnetron sputtering.…”
Section: Introductionmentioning
confidence: 99%
“…Among transition metal carbides, tantalum carbide (TaC) has attracted considerable attention since it has high hardness, good thermal stability, high melting temperature (3880 • C), low contact resistance, and excellent tribological performance. Based on its superior performance and promising applications in industry, nanocomposite TaC coatings have been prepared and studied by a variety of modern surface modification technologies, such as hot pressing [17], magnetron sputtering [1] [18][19] [20][21] [22] [23], in situ reaction (ISR) technique [24] [25], carburization [26] [27], pulsed laser ablation deposition [28][29] [30], chemical vapor deposition [31] [32], electrodeposition [33] and so on. Among them, one of the most widely used techniques to grow TaC films is direct current (DC) magnetron sputtering.…”
Section: Introductionmentioning
confidence: 99%