Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

Bliss, D.; Lynch, C.; Weyburne, David; O'Hearn, K.; Bailey, J. S.

doi:10.1016/j.jcrysgro.2005.10.140

Cited by 41 publications

(35 citation statements)

References 17 publications

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“…These results show similar crystal quality to OP-GaAs films obtained from templates with offcut (100) substrate and domain walls on (011) planes. 8,11 However, the growth rate on templates with on-axis (100) substrate was higher than expected. 8 The previous study by Bliss et al 8 shows that the thick film growth rate on OPGaAs templates fabricated using a Ge layer depends on the offcut angle of the substrate.…”

Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

“…8,11 However, the growth rate on templates with on-axis (100) substrate was higher than expected. 8 The previous study by Bliss et al 8 shows that the thick film growth rate on OPGaAs templates fabricated using a Ge layer depends on the offcut angle of the substrate. The growth rate on wafers with the (100) substrate oriented 4° toward the <111>B is approximately twice the growth rate on wafers with a 2° offcut, i.e., 110 µm/hr vs. 55 µm/hr.…”

Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

“…Thick regrowth of GaAs on patterned templates was conducted via low pressure HVPE in a custom-built reactor at the Air Force Hanscom Research Site. 8 The system consists of a horizontal quartz tube, heated by a three-zone furnace and sealed to allow low pressure operation in the range of 1 to 5 Torr, illustrated in Fig. 3.…”

Section: Experiments Detailsmentioning

confidence: 99%

“…Low pressure hydride vapor phase epitaxy (HVPE) with a rapid growth rate well above 100 µm/hr is usually employed for GaAs growths up to 500 µm thick. 8 There are currently two types of approaches to prepare orientation-patterned templates. One approach is based on Molecular Beam Epitaxial (MBE) growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy.…”

Section: Introductionmentioning

confidence: 99%

“…This freedom in choice of the orientation can be further explored for QPM and integrated device applications. [3][4][5][6][7][8]11 From the refractive index measurements for GaAs at 25°C, 12 the calculated relationships between idler and signal wavelengths (λ) across a range of QPM periods and for three pump wavelengths are shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

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Wafer-fused orientation-patterned GaAs

Fenner

Termkoa

et al. 2008

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. (From -To) REPORT DATE (DD-MM-YYYY) 13-02-2008 REPORT TYPE Conference Proceeding Paper DATES COVERED SPONSOR/MONITOR'S ACRONYM(S)AFRL/RYHC SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES)Electromagnetics ABSTRACTThe fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OPGaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 µm thick OPGaAs film was grown on the template at an average rate of ~70 µm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stain-etched cross sections. The optical loss at ~2 μm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semiinsulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phase-matching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries. SUBJECT TERMS ABSTRACTThe fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 µm thick OP-GaAs film was grown on the template at an average rate of ~70 µm/hr by HVPE. The antiphase...

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Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

Section: N T a M I N A T I O N A C C U M U L A T E D A R O U N D T H mentioning

confidence: 75%

Section: Experiments Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Wafer-fused orientation-patterned GaAs

Fenner

Termkoa

et al. 2008

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII

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Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy

Strömberg

Bhargava

et al. 2020

Physica Status Solidi (a)

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Direct heteroepitaxy and selective area growth (SAG) of GaP and GaAs on Si(100) and Si(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are facilitated by buffer layers grown at 410–490 °C with reactive gas mixing directly above Si substrates. High‐density islands observed on GaP buffer layers on Si result in rough morphology and defect formation in the subsequent GaP layers grown at 715 °C. The impact of growth temperature of GaAs buffer layers on the crystal quality of GaAs/Si is studied. A decreased nucleation temperature significantly improves the morphology and crystalline quality of the overall GaAs growth on Si. It is observed that Si(111) substrates are favorable for both GaP and GaAs growths in comparison with Si(100). In SAGs of GaP/Si and GaAs/Si, the high selectivity innate to HVPE is maintained in the used unconventional growth regime. The spatially resolved photoluminescence mapping reveals the material quality of GaAs/Si is enhanced by defect filtering by SAG. The outcomes of this work will pave the way of III–V/Si integration realized by cost‐effective HVPE for photonic device applications.

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