2009
DOI: 10.1016/j.jcrysgro.2009.06.001
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Epitaxial growth of ZnO films on thin FeO(111) layers

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Cited by 11 publications
(12 citation statements)
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“…0, metal atoms tend to exist in the form of particles/ clusters, while S , 0 benefits formation of a continuous film. 31 Comparing the Ag-MgO(100) system with the Ag-MgO(111) system, c MgO is a decisive factor to determine the growth mode of Ag. It has been reported that the average surface energy of O-terminated MgO(111) surface is y5.3 J m 22 , which is much higher than that of MgO(100) surface (0.9 J m 22 ).…”
Section: Growth Of Ag On Faceted Mgo(111) Filmsmentioning
confidence: 99%
“…0, metal atoms tend to exist in the form of particles/ clusters, while S , 0 benefits formation of a continuous film. 31 Comparing the Ag-MgO(100) system with the Ag-MgO(111) system, c MgO is a decisive factor to determine the growth mode of Ag. It has been reported that the average surface energy of O-terminated MgO(111) surface is y5.3 J m 22 , which is much higher than that of MgO(100) surface (0.9 J m 22 ).…”
Section: Growth Of Ag On Faceted Mgo(111) Filmsmentioning
confidence: 99%
“…Fe oxide buffer layers improve the NiO(111) growth with respect to the direct growth on the pristine Mo(110) substrate, decreasing the lattice mismatch and lowering the interfacial energy thanks to the chemical reactions occurring between NiO and the iron oxide [158]. A similar strategy, employing a FeO(111) layer grown on Mo (110), was adopted for the stabilization of ZnO(0001) films [159].…”
Section: Magnetic Couplingmentioning
confidence: 99%
“…A second type of polar/polar interfaces is characterized by δ P ̸ = 0, when one or several of its three contributions (structural, valence, or electronic discontinuity) are non zero. Such interfaces are polar, with a strong voltage across the system, which has to be canceled out, either by interface non-stoichiometry, as in the ZnO/FeO interface [84], or by the formation of a 2DEG, depending upon experimental preparation conditions. For the latter to exist, an overlap between the top of the VB of one compound and the bottom of the CB of the other compound has to take place, as illustrated in Fig.…”
Section: Electronic Reconstruction At Polar/polar Interfacesmentioning
confidence: 99%