Epitaxial Ir layers on SrTiO 3 as substrates for diamond nucleation: deposition of the films and modification in the CVD environment

Hörmann, F.; Röll, H.; Schreck, M.; Stritzker, B.

doi:10.1016/s0925-9635(99)00242-3

Cited by 35 publications

(15 citation statements)

References 6 publications

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“…Detailed process conditions are described in Ref. 18. The mosaic spread of the Ir films was in the range between 0.2° and 0.3°, as measured by X-ray diffraction (XRD).…”

Section: Methodsmentioning

confidence: 99%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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Comparative electron diffraction study of the diamond nucleation layer on Ir (001) Gsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, BGsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, B (2008 Comparative electron diffraction study of the diamond nucleation layer on Ir(001) AbstractThe carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C 1s patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer.The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix.

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“…Detailed process conditions are described in Ref. 18. The mosaic spread of the Ir films was in the range between 0.2° and 0.3°, as measured by X-ray diffraction (XRD).…”

Section: Methodsmentioning

confidence: 99%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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“…Their size was 10 × 10 mm 2 . Detailed process conditions are described elsewhere [15,16]. The mosaic spread of the Ir films was in the range of 0.1-0.2°as measured by X-ray diffraction (XRD) and the surface consisted of large terraces.…”

Section: Methodsmentioning

confidence: 99%

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Gsell

Schreck

Benstetter

et al. 2007

Diamond and Related Materials

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“…13 Subsequent diamond deposition was done by microwave plasma CVD using the BEN procedure for nucleation. Typical process parameters were 25-60 min biasing at Ϫ250 V, Ϸ700°C, 30 mbar, 1100 W microwave power with 5% CH 4 in H 2 .…”

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confidence: 99%

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

Schreck

Hörmann

Röll

et al. 2001

Applied Physics Letters

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It is shown that diamond nucleation on iridium buffer layers followed by an appropriate textured-growth step offers a viable way to realize single-crystal diamond films. Bias-enhanced nucleation on iridium layers results in heteroepitaxial diamond films with highly improved alignment. By a subsequent textured-growth step, the mosaicity can be further reduced for tilt as well as for twist in sharp contrast to former experiments using silicon substrates. Minimum values of 0.17° and 0.38° have been measured for tilt and twist, respectively. Plan view transmission electron microscopy of these films shows that, for low thicknesses (0.6 μm and 8 μm), the films are polycrystalline, consisting of a closed network of grain boundaries. In contrast, at the highest thickness (34 μm) most of the remaining structural defects are concentrated in bands of limited extension. The absence of an interconnected network of grain boundaries shows that the latter films are no longer polycrystalline.

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Epitaxial Ir layers on SrTiO 3 as substrates for diamond nucleation: deposition of the films and modification in the CVD environment

Cited by 35 publications

References 6 publications

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films

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