Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes

De, Prithwiraj

doi:10.1016/j.mejo.2005.10.014

Cited by 4 publications

(1 citation statement)

References 19 publications

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“…The static properties of the diode have been obtained following the method of Datta et al [13]. With the static parameters as input, the spatial variation of the diode negative resistivity and the reactivity in the depletion layer have been obtained solving the device equations, described elsewhere [1,11,14,15,16]. The series resistance has been calculated following the relation of Adlerstein et al [17].…”

Section: Introductionmentioning

confidence: 99%

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

De¹

2014

IOSRJECE

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The effect of optically generated reverse saturation current on the series resistance and negative resistance properties of single drift region (n ++ np ++) X band Si IMPATT diodes under (i) punch through, (ii) exact and (iii) undepleted field distributions have been studied. Simulation following Gummel-Blue approach [1] indicates an overall degradation of microwave properties with an increase of series resistance due to enhancement of illuminated leakage current.

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Section: Introductionmentioning

confidence: 99%

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

De¹

2014

IOSRJECE

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Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode

2007

Current Applied Physics

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Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

Farag¹,

Yahia²,

Wójtowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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A set of p-ZnTe/n-CdTe heterojunctions were grown on conducting GaAs substrates by molecular beam epitaxy. The current density–voltage (J–V) and capacitance–voltage (C–V) characteristics measured in the temperature range 300–400 K were analysed in order to reveal the dominant carrier transport mechanisms through the junctions. The C–V measurements show that the device is linearly graded. The temperature dependence of the built-in potential and the impurity gradient of the device were determined. The deep defect states govern the current flow through the junctions. The measurements under the lower voltage region (V < 0.35 V) reveal at the p-ZnTe/n-CdTe interface, the presence of deep defect states with the activation energy of 0.52 eV. Under the higher forward bias voltage (V > 0.35 V), the space-charge-limited current governed the J–V characteristics with a single traps level, ΔE t = 0.55 eV. The p-ZnTe/n-CdTe device under different illumination intensities exhibit a significant photosensitivity proving that this kind of heterostructure can be regarded as a good candidate for photodiode applications.

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Epitaxial layer induced series resistance and microwave properties of N+NP+ Si X band impatt diodes

Cited by 4 publications

References 19 publications

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode

Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy

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