Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase

Insulators for 2D nanoelectronics: the gap to bridge

“…In addition to their use as insulators, the wide class of epitaxial fluorides 138 also contains numerous materials with other fascinating properties. These are, for instance, antiferromagnetic NiF 2 140 and MnF 2 141 , diamagnetic ZrF 2 141 and ferroelectric BaMgF 4 142 . One of the most promising research directions is the use of ferroelectric BaMgF 4 142 in steep slope devices such as negative capacitance (NC) FETs, which could be game-changers for future low-power electronics.…”

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

“…Apart from CaF 2 , several other ionic fluorides, such as NiF 2 , MnF 2 , and ZrF 2 are potential dielectric materials that can be exploited. [147,148] Currently, the major limitation of CaF 2 is preparation: as the epitaxy of high-quality CaF 2 is enabled by good lattice matching with Si, one can expect that CaF 2 growth on 2D semiconductors will face similar difficulties as conventional high-κ oxides. For this reason, CaF 2 has only been used as bottom-gate dielectric thus far.…”

Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators

“…While opening a way to the further development of 2D FETs and other emerging devices with various fascinating fluoride materials [36][37][38], we argue that estimation of the real potential of any new technology requires proper understanding of their reliability. In particular, all previously reported 2D FETs suffer from charge trapping by insulator defects.…”

“…Thus, as the next step in this work we extend our previous findings towards More than Moore electronics based on 2D materials which suffers from similar problems of forming high quality interfaces with insulators with few charge traps. 10 We open a way to the further development of scalable GFETs with various fluoride materials not limited to CaF 2 but including also MgF 2 or SrF 2 [25][26][27] and attempt to estimate the real potential of CaF 2 /graphene technologies by benchmarking the device-to-device variability, hysteresis and bias-temperature instabilities (BTI) of the gate transfer characteristics. We examine more than 200 GFETs with different channel dimensions and study the hysteresis and BTI dynamics in these devices for a broad range of temperatures from 25 o C to 175 o C. After minimizing the impact of non-insulator defects by annealing at 175 o C, we demonstrate that the stable clockwise hysteresis as well as the BTI drifts in our GFETs with CaF 2 are comparable to those in stresses.…”