Epitaxial lift-off and its applications

Demeester, Piet; Pollentier, Ivan; Dobbelaere, P. De; Brys, C.; Daele, Peter Van

doi:10.1088/0268-1242/8/6/021

Cited by 92 publications

(45 citation statements)

References 26 publications

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“…A promising set of prospects are trinary AlGaAs layers grown on GaAs substrates and then attached to silica or silicon mirrors via epitaxial liftoff (ELO) (Demeester et al, 1993). These structures have been grown on GaAs substrates and the resulting mechanical Q is $30 times larger than the best amorphous high-reflectivity coatings (Cole et al, 2008).…”

Section: Heteroepitaxial Bragg Mirrorsmentioning

confidence: 99%

Gravitational radiation detection with laser interferometry

2014

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Gravitational-wave detection has been pursued relentlessly for over 40 years. With the imminent operation of a new generation of laser interferometers, it is expected that detections will become a common occurrence. The research into more ambitious detectors promises to allow the field to move beyond detection and into the realm of precision science using gravitational radiation. In this article, the state of art for the detectors is reviewed and an outlook for the coming decades is described.

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Section: Heteroepitaxial Bragg Mirrorsmentioning

confidence: 99%

Gravitational radiation detection with laser interferometry

2014

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“…While recordhigh IQEs have been reported for devices fabricated on GaAs, 2 fabricating efficient LEDs typically requires lifting off 12,13 the GaAs substrate. On the other hand, the InGaAsP material system readily allows the fabrication of a thick lattice matched DHJ structure on a transparent InP substrate.…”

Section: Yield and Leakage Currents Of Large Area Lattice Matched Inpmentioning

confidence: 99%

Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures

Olsson¹,

Aierken²,

Jussila³

et al. 2014

Journal of Applied Physics

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Demonstrating and harnessing electroluminescent cooling at technologically viable cooling powers requires the ability to routinely fabricate large area high quality light-emitting diodes (LEDs). Detailed information on the performance and yield of relevant large area devices is not available, however. Here, we report extensive information on the yield and related large area scaling of InP/InGaAs LEDs and discuss the origin of the failure mechanisms based on lock-in thermographic imaging. The studied LEDs were fabricated as mesa structures of various sizes on epistructures grown at five different facilities specialized in the growth of III-V compound semiconductors. While the smaller mesas generally showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited unusually large leakage current densities. The provided information is critical for the development and design of the optical cooling technologies relying on large area devices.

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“…As In could become scarce due to its present use in electronics [275] , the use of bulk material appears too expensive for applications. Therefore, homoepitaxial thin fi lms have been prepared on InP wafers which can be removed by established lift -off techniques [276] . The preparation by MOVPE allows scaling up and fi ne tuning of the growth process, enabling fabrication of fi lms with high electronic quality [277] .…”

Section: Basic Considerationsmentioning

confidence: 99%

Tailoring of Interfaces for the Photoelectrochemical Conversion of Solar Energy

Lewerenz

2010

Advances in Electrochemical Sciences and Engineering

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IntroductionIn the search for terrestrially applicable carbon -neutral energy sources, photoelectrochemical systems exhibit several advantageous features: examples are the facilitated junction formation at the electrolyte interface, the scalability typically achieved by self -organized processes at the solid -liquid boundary [1, 2] , lowtemperature processing, and the in situ preparation and optimization of specifi c interface conditions [3,4] . In addition, photoelectrochemical solar cells can operate in the photovoltaic [5 -9] as well as in the photoelectrocatalytic [10 -14] mode. The latter is of particular importance because global energy consumption is clearly dominated by the use of fuels compared to electricity [15] . Due to stability issues when operating a solar cell at a reactive phase boundary, such as a semiconductor -electrolyte contact, photovoltaic electrochemical solar cells have technologically not been realized despite the existence of systems that have demonstrated extended stability under operation [4,7] . As limited thermodynamic stability is also a factor for solar fuel generating devices, a general strategy is needed for the future implementation of photoelectrochemical solar energy conversion systems.At the present stage of the fi eld, a multifaceted approach appears mandatory which focuses on fundamental research regarding charge and excitation energy transfer [16 -18] , materials development, particularly in conjunction with the developments in nanoscience [19 -23] , and control of interface behavior [24 -26] . This latter aspect will be the focus of the present chapter.Besides the investigation of fundamental properties of the solid -liquid interface, the situation with a rapidly deteriorating atmospheric situation [27] also demands the use of rational screening methods for the identifi cation and examination of novel photoactive materials, material combinations, and composites [28 -30] . It is obvious that a large -scale and international research and development effort is 2 Advances in Electrochemical Science and Engineering. Edited

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Epitaxial lift-off and its applications

Cited by 92 publications

References 26 publications

Gravitational radiation detection with laser interferometry

Gravitational radiation detection with laser interferometry

Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures

Tailoring of Interfaces for the Photoelectrochemical Conversion of Solar Energy

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