Epitaxial lithium fluoride films grown by pulsed laser deposition

Tsang, W. S.; Mak, Chee Leung; Wong, Kam-Fai

doi:10.1007/s00339-002-1894-6

Cited by 15 publications

(9 citation statements)

References 16 publications

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“…Thermal evaporation of solid LiF is an often used deposition method,1, 2, 4, 6, 7, 13 sometimes being assisted by low‐energy ions such as Xe or Ar 3, 14. Pulsed laser deposition has also been utilized,15, 16 as well as electron beam evaporation,17–19 and DC magnetron sputtering 20. Chemical methods, such as CVD and ALD have, to our knowledge, not been reported.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors

Mäntymäki

Hämäläinen

Puukilainen

et al. 2013

Chemical Vapor Deposition

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ithium fluoride (LiF) is an important optical material with a low refractive index and a large band gap. In this study, thin films of LiF are deposited using atomic layer deposition (ALD). Lithd and TiF 4 are used as precursors, and they produce crystalline LiF in the temperature range 250-350 8C. The films are studied with UV-Vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and elastic recoil detection analysis (ERDA).Adhesion of the films is tested by a Scotch tape test. This ALD process results in LiF films with a growth rate of approximately 1 Å per cycle at 325 8C. According to ERDA measurements, the films are pure LiF with only small O, C, and H impurities.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors

Mäntymäki

Hämäläinen

Puukilainen

et al. 2013

Chemical Vapor Deposition

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“…LiF has a wide band gap of 14.6 eV and highly stable radiation-induced color centers at RT. These characteristics make LiF a prospective material for many applications such as laser sources, wave guides and dosimetry [17][18][19]. Moreover, LiF films were grown epitaxially on Si (100) opening the possibility of using LiF as an insulating material in silicon based devices [20].…”

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confidence: 99%

Tuning the Fabrication of Nanostructures by Low-Energy Highly Charged Ions

et al. 2016

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Slow highly charged ions have been utilized recently for the creation of monotype surface nanostructures (craters, calderas, or hillocks) in different materials. In the present study, we report on the ability of slow highly charged xenon ions (^{129}Xe^{Q+}) to form three different types of nanostructures on the LiF(100) surface. By increasing the charge state from Q=15 to Q=36, the shape of the impact induced nanostructures changes from craters to hillocks crossing an intermediate stage of caldera structures. A dimensional analysis of the nanostructures reveals an increase of the height up to 1.5 nm as a function of the potential energy of the incident ions. Based on the evolution of both the geometry and size of the created nanostructures, defect-mediated desorption and the development of a thermal spike are utilized as creation mechanisms of the nanostructures at low and high charge states, respectively.

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“…Only the amount of Li2S is drastically reduced. Nevertheless, although the reaction products and their order hints towards a reduction reaction a direct electron transfer can be fully excluded due to the large band gap of LiF with EGap,LiF = of 13.6 eV 42 and the valence band maximum around EVBM = 5.9 eV.…”

Section: Lifmentioning

confidence: 99%

On the Surface Modification of LLZTO with LiF via a Gas-Phase Approach and the Characterization of the Interfaces of LiF with LLZTO as well as PEO+LiTFSI

Donzelli¹,

Ferber²,

Vanita³

et al. 2022

Preprint

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In this study we present gas-phase fluorination as a method to create a thin LiF layer on Li6.5La3Zr1.5Ta0.5O12 (LLZTO). We compare these fluorinated films with LiF films produced by RF-magnetron sputtering, where we investigated the interface between the LLZTO and the deposited LiF showing no formation of a reaction layer. Furthermore, we investigate the ability of this LiF layer as a protection layer against Li2CO3 formation in ambient air. By this we show that Li2CO3 formation is absent at the LLZTO surface after 24 h in ambient air supporting the protective character of the formed LiF films and hence could enhance the handling of LLZTO in air for battery production. With respect to the use within hybrid electrolytes consisting of LLZTO and a mixture of polyethylene oxide (PEO) and Lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) we also investigated the interface between the formed LiF films and a mixture of PEO LiTFSI by X-ray photoelectron spectroscopy (XPS) showing decomposition of the LiTFSI at the interface.

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Epitaxial lithium fluoride films grown by pulsed laser deposition

Cited by 15 publications

References 16 publications

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors

Tuning the Fabrication of Nanostructures by Low-Energy Highly Charged Ions

On the Surface Modification of LLZTO with LiF via a Gas-Phase Approach and the Characterization of the Interfaces of LiF with LLZTO as well as PEO+LiTFSI

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Epitaxial lithium fluoride films grown by pulsed laser deposition

Cited by 15 publications

References 16 publications

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF4 Precursors

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF4 Precursors

Tuning the Fabrication of Nanostructures by Low-Energy Highly Charged Ions

On the Surface Modification of LLZTO with LiF via a Gas-Phase Approach and the Characterization of the Interfaces of LiF with LLZTO as well as PEO+LiTFSI

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Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors

Atomic Layer Deposition of LiF Thin Films from Lithd and TiF₄ Precursors