Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition

Satyalakshmi, K. M.; Mallya, R. M.; Ramanathan, K. V.; Wu, X. D.; Brainard, Benjamin M.; Gautier, D. C.; Vasanthacharya, N. Y.; Hegde, M. S.

doi:10.1063/1.109612

Cited by 139 publications

(50 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity values and the position of Bragg peaks are very consistent with the previous reports on LNO thin films. 16,17,18 The fringe pattern around the LNO(002) Bragg peak shown in the inset of Fig. 1 (d) suggests a thickness uniformity of the order of a unit cell, that is, it confirms the formation of atomically-flat thin film surface and interface between the film and the substrate.…”

Section: 56mentioning

confidence: 77%

“…10,11,12 Furthermore, while it is extremely difficult to grow single crystals of the RNO series, the growth of epitaxial films of RNO for use in device applications is known. 16,17,18,19 Hence we felt it important to study the electronic structure of LNO using in situ SX PES. In this paper, we report in situ PES study on high-quality LNO epitaxial thin films, which are also characterized for the structure and by electrical resistivity.…”

Section: 56mentioning

confidence: 99%

See 1 more Smart Citation

Electronic structure ofLaNiO3−x: Anin situsoft x-ray photoemission and absorption study

et al. 2007

View full text Add to dashboard Cite

We investigate the electronic structure of high-quality single-crystal LaNiO3 (LNO) thin films using in situ photoemission spectroscopy (PES). The in situ high-resolution soft x-ray PES measurements on epitaxial thin films reveal the intrinsic electronic structure of LNO. We find a new sharp feature in the PES spectra crossing the Fermi level, which is derived from the correlated Ni 3d eg electrons. This feature shows significant enhancement of spectral weight with decreasing temperature. From a detailed analysis of resistivity data, the enhancement of spectral weight is attributed to increasing electron correlations due to antiferromagnetic fluctuations.

show abstract

Section: 56mentioning

confidence: 77%

Section: 56mentioning

confidence: 99%

Electronic structure ofLaNiO3−x: Anin situsoft x-ray photoemission and absorption study

et al. 2007

View full text Add to dashboard Cite

show abstract

“…These values of a are in excellent agreement with that of a = 0.383 nm found in LNO films grown by pulsed laser ablation. 24 We have also estimated the average crystallite size of these films by using the Scherrer relation and the full width at half maximum of the diffraction peaks. The average crystallite sizes were ϳ100 and 30 nm for LNO-CF and LNO-MW thin films, respectively.…”

Section: Resultsmentioning

confidence: 99%

Structural, microstructural, and transport properties of highly oriented LaNiO3 thin films deposited on SrTiO3 (100) single crystal

Mambrini

Leite

Escote

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

Electrical conductive textured LaNiO 3 / SrTiO 3 ͑100͒ thin films were successfully produced by the polymeric precursor method. A comparison between features of these films of LaNiO 3 ͑LNO͒ when heat treated in a conventional furnace ͑CF͒ and in a domestic microwave ͑MW͒ oven is presented. The x-ray diffraction data indicated good crystallinity and a structural orientation along the ͑h00͒ direction for both films. The surface images obtained by atomic force microscopy revealed similar roughness values, whereas films LNO-MW present slightly smaller average grain size ͑ϳ80 nm͒ than those observed for LNO-CF ͑60-150 nm͒. These grain size values were in good agreement with those evaluated from the x-ray data. The transport properties have been studied by temperature dependence of the electrical resistivity ͑T͒ which revealed for both films a metallic behavior in the entire temperature range studied. The behavior of ͑T͒ was investigated, allowing to a discussion of the transport mechanisms in these films.

show abstract

“…The highly conductive films, which can be used both as the buffer layers and interconnects or electrodes in hybrid devices, can be the promising alternatives for dielectrics. One of them -LaNiO 3−x films has been successfully fabricated by various methods such as d.c. Sputtering, pulsed laser deposition (PLD), sol-gel method, metalorganic decomposition (MOD), metalorganic chemical vapor deposition (MOCVD) or mist plasma evaporation (MPE) [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

Mickevičius¹,

Grebinskij²,

Bondarenka³

et al. 2006

Journal of Alloys and Compounds

195

View full text Add to dashboard Cite

Epitaxial thin films of LaNiO 3−x were deposited by using a reactive d.c. magnetron sputtering technique. High-energy X-ray photoelectron spectroscopy was used to analyze the composition and valence states of La and Ni in the films after long time aging in atmosphere. The obtained results show the existence lanthanum and nickel in oxide and hydroxide chemical states. The oxygen exists in four chemical states: lattice oxides, hydroxyl groups and in adsorbed water. Comparison of the spectra recorded at normal emission and grazing emission angle revealed that the hydroxyl group's concentration is mostly present at the surface of the film.

show abstract

Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition

Cited by 139 publications

References 8 publications

Electronic structure ofLaNiO3−x: Anin situsoft x-ray photoemission and absorption study

Electronic structure ofLaNiO3−x: Anin situsoft x-ray photoemission and absorption study

Structural, microstructural, and transport properties of highly oriented LaNiO3 thin films deposited on SrTiO3 (100) single crystal

Investigation of epitaxial LaNiO3−x thin films by high-energy XPS

Contact Info

Product

Resources

About