Epitaxial multilayers of ferromagnetic insulators with nonmagnetic metals and superconductors

Roesler, Gordon; Filipkowski, M. E.; Broussard, P. R.; Idzerda, Y. U.; Osofsky, M. S.; Soulen, R. J.

doi:10.1117/12.179175

Cited by 18 publications

(15 citation statements)

References 3 publications

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“…Indeed, the spin splitting in Al owing to the exchange interaction at the EuS/Al interface has been shown to be inversely proportional to the Al layer thickness 25 , clearly indicating that the observed exchange values are owing to the interface effect averaged over all the sheet carriers per unit area. From the known value of DB0.26 meV (B4.5 T internal field) for a 4 nm Al film 25 , we deduce the magnitude of the exchange constant JB9.6 meV, consistent with the values determined from other methods 26 . We also know that the spin orientation of polarized conduction electrons is opposite to those of the rareearth ions, which was well-documented in earlier NMR studies 29,30 .…”

Section: Resultssupporting

confidence: 86%

“…Furthermore, conduction electrons travelling near the interface of a magnetic insulator experience indirect exchange interactions 21 with the localized-magnetic moments at the interface and become spin split in the process. Very strong exchange interaction does occur at the interface between rare-earth compounds and metals [22][23][24][25][26] . The highly localized and ferromagnetically ordered 4f electrons in the rare-earth ions can induce magnetic orientation of conduction electrons at the interface of neighbouring metals, giving rise to large spin splitting within the metal conduction bands.…”

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confidence: 99%

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Spin regulation in composite spin-filter barrier devices

et al. 2014

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Magnetic insulators are known to provide large effective Zeeman fields that are confined at an interface, making them especially powerful in modifying adjacent one-or two-dimensional electronic structures. Utilizing this phenomenon and the other important property of magnetic insulators-spin filtering-here we report the generation and subsequent detection of a large interface field, as large as tens of tesla in EuS/Al/EuS heterostructures with metallic coulomb islands confined within a magnetic insulator barrier. The unique energy profile across this sandwich structure produces spin-assisted charge transfer across the device, generating a spontaneous spin current and voltage. These unique properties can be practical for controlling spin flows in electronic devices and for energy harvesting.

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Section: Resultssupporting

confidence: 86%

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confidence: 99%

Spin regulation in composite spin-filter barrier devices

et al. 2014

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“…The exchange constant was determined to be around 10 meV63,64 in these systems, and the coupling antiferromagnetic 7,66. …”

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confidence: 99%

Spin manipulation with magnetic semiconductor barriers

Miao

Moodera

2015

Phys. Chem. Chem. Phys.

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Magnetic semiconductors are a class of materials with special spin-filtering capabilities with magnetically tunable energy gaps. Many of these materials also possess another intrinsic property: indirect exchange interaction between the localized magnetic moments and the adjacent free electrons, which manifests as an extremely large effective magnetic field applying only on the spin degrees of freedom of the free electrons. Novel device concepts can be created by taking advantage of these properties. We discuss in the article the basic principles of these phenomena, and potential ways of applying them in constructing spintronic devices.

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“…29 While molecular oxygen has been used for the growth of oxides that are easily oxidized, 5,6,32,33,[43][44][45][46][47]51,[58][59][60] oxidants with higher activity are needed for the growth of ferroelectrics or superconductors containing species that are more difficult to oxidize, e.g., bismuth-, lead-, or copper-containing oxides. For this purpose, purified ozone 13 have been successfully employed.…”

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confidence: 99%

Perspective: Oxide molecular-beam epitaxy rocks!

Schlom

2015

APL Materials

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Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

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Epitaxial multilayers of ferromagnetic insulators with nonmagnetic metals and superconductors

Cited by 18 publications

References 3 publications

Spin regulation in composite spin-filter barrier devices

Spin regulation in composite spin-filter barrier devices

Spin manipulation with magnetic semiconductor barriers

Perspective: Oxide molecular-beam epitaxy rocks!

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