Epitaxial orientation of β-FeSi2/Si heterojunctions obtained by RTP chemical vapor deposition

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

“…3(b)). The former epitaxial relationship has been previously reported [17][18][19], however, the later has been scarcely observed. We think that the melted Si surface contributed to the formation of this unique epitaxial relationship.…”

Epitaxial growth of (100)-oriented β-FeSi2 film on 3CSiC(100) plane

“…This means that the b-FeSi 2 thin film had a (1 0 0)-preferred orientation. The epitaxial growth of (1 0 0)-oriented b-FeSi 2 on the Si(1 0 0) plane by CVD [12,13], MBE [14] and reactive atomic deposition [15] has been reported. The same (1 0 0)-oriented b-FeSi 2 film was also observed on the 3C-SiC(1 0 0) plane although the unit axis of 3C-SiC is smaller than that of Si by 20%.…”