Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition

Abstract

La 0.5 Sr 0.5 CoO 3 /Pb(Zr x Ti 1−x )O 3 /La 0.5 Sr 0.5 CoO 3 capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO 3 thin layer (20 nm) as a template. Zr(dmhd) 4 in tetrahydrofuran was used as Zr precursor for compatible thermal behavior with Pb(thd) 2 and Ti(OiPr) 2 (thd) 2 precursors. The dependence of the ferroelectric film composition on the precursor mixing ratio and growth temperature has been systematically studied by Rutherford Backscattering (RBS). Ferroelectric and piezoelectric properties at the composition close to morphotropic phase boundary region (Pb(Zr 0.5 Ti 0.5 )O 3 ) have been investigated for application in nonvolatile ferroelectric random access memories and microelectromechanical system (MEMS). These capacitors show desirable ferroelectric properties, which proves that this approach is very promising for both fundamental study and potential applications. The changes of spontaneous polarization (P s ) and piezoelectric coefficient (d 33 ) with Ti/(Zr + Ti) ratio are also presented and compared with theoretical values.

Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

“…Li et al studied ultrafast polarization switching of PZT thin film with a femtosecond laser [8]. Yang et al fabricated epitaxial PZT thin film capacitors on Si by liquid delivery metal organic chemical vapor deposition and studied their polarizations and piezoelectric coefficients [9]. In general, PZT thin film often shows smaller polarizations and piezoelectric coefficients than PZT bulk material with the same composition due to a variety of reasons including electrode [10], interface [11], and substrate [12].…”

Fabrication of Ferroelectric Pb(Zr,Ti)O3 Thin Films by Spray Metalorganic Chemical Vapor Deposition

“…Liquid delivery metalorganic chemical vapor deposition (LD-MOCVD) has been researched and developed as a fabrication technique for ferroelectric thin films. [1][2][3][4][5][6][7][8][9][10][11] However, notwithstanding its capacity for high-quality thin film formation, the LD-MOCVD system is highly complex and requires continuous maintenance for stable operation. The most important subjects to be developed related to LD-MOCVD techniques are the vaporization system of liquid sources and the transport of vaporized source gases.…”