2007
DOI: 10.1016/j.jallcom.2006.09.001
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Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

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Cited by 17 publications
(8 citation statements)
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“…Little success has been achieved in obtaining high quality epitaxial perovskite PMN-PT films on a conductive electrode due to the appearance of stable pyrochlore phases. To achieve oriented, or even epitaxial films, the PMN-PT films are prepared on single crystal substrates, such as SrTiO 3 [3], Al 2 O 3 [4], and LaAlO 3 [5], that posses a crystal structure and lattice constants that approximate those of PMN-PT. However, single-crystal substrates are expensive and can only provide a small-sized geometry, which is contrary to Si technology that features lower cost, a larger area, and volume production.…”
Section: Introductionmentioning
confidence: 99%
“…Little success has been achieved in obtaining high quality epitaxial perovskite PMN-PT films on a conductive electrode due to the appearance of stable pyrochlore phases. To achieve oriented, or even epitaxial films, the PMN-PT films are prepared on single crystal substrates, such as SrTiO 3 [3], Al 2 O 3 [4], and LaAlO 3 [5], that posses a crystal structure and lattice constants that approximate those of PMN-PT. However, single-crystal substrates are expensive and can only provide a small-sized geometry, which is contrary to Si technology that features lower cost, a larger area, and volume production.…”
Section: Introductionmentioning
confidence: 99%
“…Although researchers have already obtained good epitaxial PMN-PT thin films on some single crystal substrates such as SrTiO 3 [6], Al 2 O 3 [7], and LaAlO 3 [8] using different deposition methods (sputtering, pulsed laser deposition, and metal-organic chemicalvapor deposition), fabrication on silicon is preferred for industrial applications, because it is a much cheaper substrate and also provides the promise that it can be integrated with a complementary metal-oxide semiconductor process. In order to grow epitaxial PMN-PT thin films on an Si substrate, suitable buffer layers with good diffusion barrier properties and Si epitaxy must be used.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, PZT ceramics have been extensively modified with different additives, which make them more attractive for specific applications [8][9][10][11][12][13][14]. With the miniaturization and integration of electronic circuits, small-scale piezoelectric devices are technologically important in the fields of smart materials and microelectromechanical systems (MEMS) [15].…”
Section: Introductionmentioning
confidence: 99%