Epitaxial relationship in the AlN/Si(001) heterosystem

Lebedev, V.; Jinschek, Joerg R.; Kaiser, Ute; Schröter, Bernd; Richter, W.; Kräußlich, J.

doi:10.1063/1.126244

Cited by 48 publications

(23 citation statements)

References 8 publications

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“…The two growth domains thus are oriented 90 with respect to each other, which corresponds to the four-fold symmetry of the (001) diamond surface. These results are in good agreement with comparable heteroepitaxial systems, like GaN on (001) Si, 37 AlN on (001) Si, 38 and AlN on (001) diamond. 39,40 In all cases, two growth domains rotated 90 with respect to each other were found, with the h10 11i crystal domains aligned along the [110] and ½1 10 directions of the underlying substrate.…”

Section: Growth Temperaturesupporting

confidence: 78%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Growth Temperaturesupporting

confidence: 78%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…The RF sputtering power during the growth was maintained at 139 W. AlN and InN thin films were deposited independently onto cleaned c-Si (111) substrates. The substrates were clamped to a thick copper block that limited the temperature during deposition to T < 325 K. The Si substrate offers significant advantages for nitride devices over other substrate materials [14]. The a-(Al, In) N thin films were deposited at a rate 0.1-0.2, and 0.2-0.4 nm/s, respectively.…”

Section: Methodsmentioning

confidence: 99%

Spectroscopic ellipsometry characterization of amorphous aluminum nitride and indium nitride thin films

Khoshman

Kordesch

2005

phys. stat. sol. (c)

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PACS 78.20.Ci, 78.66.Fd We have measured and analyzed the optical characteristics of a series of amorphous aluminum nitride, aAlN, and amorphous indium nitride, a-InN, thin films deposited on crystalline silicon, c-Si (111), by RF reactive magnetron sputtering at temperature T < 325 K. Spectroscopic Ellipsometry measurements were carried out at two angles of incidence, 70 o and 75 o , over the wavelength range 300-1400 nm. The measured ellipsometric data were fitted to models consisting of air / a-AlN/Sio 2 / c-Si (111) and air / roughness / a-InN/ Sio 2 / c-Si (111). The roughness was modeled using the Bruggeman effective medium approximation, assuming 50% a-InN and 50% voids. The optical constants and the thicknesses of amorphous (Al, In) N films were obtained by the analysis of the measured ellipsometric spectra through the CauchyUrbach and the Tauc-Lorentz models, respectively. X-ray diffraction (XRD) analysis confirmed the amorphous nature of the films under study.

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“…Other approaches are two-step methods covering the Si(0 0 1) surface before starting the GaN growth or the use of patterned wafers, offering the Si(1 1 1) plane on the etched sidewalls [4][5][6][7][8][9][10][11][12]. A further known problem when growing on Si(0 0 1) is the occurrence of multiple in-plane alignments of the GaN crystallites [13,14]. In particular, caxis-oriented GaN and AlN on Si(0 0 1) show two in-plane domains, rotated by 301.…”

Section: Introductionmentioning

confidence: 98%