2006
DOI: 10.1016/j.tsf.2005.12.003
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Epitaxial thin-film Si solar cells

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Cited by 74 publications
(39 citation statements)
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“…The projected manufacturing cost of such low cost substrates in a coming year will be 5 $/kg, much below even from dropping prices anticipated stabilized solar grade feedstock costs of $20-30 $/kg [1]. Based on such feedstock cost and assuming further reduction of the amount of crystalline Si/W p with a rate of 5%/year, the cost of bulk crystalline Si solar cell modules would be in the range of $1Á2/W p , with industrial cell efficiencies of nearly 20%.…”
Section: Introductionmentioning
confidence: 97%
See 1 more Smart Citation
“…The projected manufacturing cost of such low cost substrates in a coming year will be 5 $/kg, much below even from dropping prices anticipated stabilized solar grade feedstock costs of $20-30 $/kg [1]. Based on such feedstock cost and assuming further reduction of the amount of crystalline Si/W p with a rate of 5%/year, the cost of bulk crystalline Si solar cell modules would be in the range of $1Á2/W p , with industrial cell efficiencies of nearly 20%.…”
Section: Introductionmentioning
confidence: 97%
“…Thin-film epitaxial Si solar cells, often referred as wafer equivalent (EpiWE), are a promising future alternative to bulk Si solar cells since the active epitaxial layer can be deposited on low quality silicon substrates, resulting in reduced costs and energy pay-back time [1]. The projected manufacturing cost of such low cost substrates in a coming year will be 5 $/kg, much below even from dropping prices anticipated stabilized solar grade feedstock costs of $20-30 $/kg [1].…”
Section: Introductionmentioning
confidence: 99%
“…The same crystallographic perfection of thin films applies to semiconductors for multilayer heterostructures for photovoltaic cells 17 and, as is more recently recognized, for photoelectrochemical cells. 18 Therefore, not only the field of computer technology but also energy technology benefitted, ultimately, from van der Merwe's seminal work.…”
Section: University Of Pretoria South Africamentioning
confidence: 75%
“…The results show that annealing for a few seconds using Ar-H 2 mesoplasma has significant effects on the porous Si substrate, similar to those obtained by convention annealing in H 2 ambient for >30 min. In this study, the epitaxial Si films deposited at a rate of 350 nm=s on the annealed porous Si substrate from SiH 4 show properties identical to those of the films deposited on a polished Si wafer.…”
mentioning
confidence: 69%