2021
DOI: 10.1021/acs.chemmater.1c02202
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Epitaxial Thin Films of a Chalcogenide Perovskite

Abstract: Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide,

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Cited by 41 publications
(42 citation statements)
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“…[ 12,13 ] Surendran et al use pulsed laser deposition and a previously BZS pellet to deposit epitaxial layers of BZS onto LaAlO 3 and SrLaAlO 4 . [ 14 ]…”
Section: Introductionmentioning
confidence: 99%
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“…[ 12,13 ] Surendran et al use pulsed laser deposition and a previously BZS pellet to deposit epitaxial layers of BZS onto LaAlO 3 and SrLaAlO 4 . [ 14 ]…”
Section: Introductionmentioning
confidence: 99%
“…[12,13] Surendran et al use pulsed laser deposition and a previously BZS pellet to deposit epitaxial layers of BZS onto LaAlO 3 and SrLaAlO 4 . [14] The techniques developed by Sadeghi et al and Comparotto et al both utilize the simultaneous deposition of Ba or BaS and Zr in a sulfuric atmosphere. Sadeghi et al used molecular beam epitaxy to grow epitaxial films of BZS onto LaAlO 3 substrate.…”
mentioning
confidence: 99%
“…[4][5][6][10][11][12][13] They feature inexpensive and non-toxic elements, combined with thermal stability up to at least 550 C. 14,15 We have recently demonstrated synthesis of large-area, atomically-smooth, epitaxial thin lms of BaZrS 3 by pulsed laser deposition (PLD) and molecular beam epitaxy (MBE). 16,17 Here we study single-crystal samples of the perovskite-structured material BaZrS 3 , and the related Ruddlesden-Popper phase Ba 3 Zr 2 S 7 . 18 BaZrS 3 is a semiconductor with direct band gap of energy E g ¼ 1.9 eV.…”
Section: Introductionmentioning
confidence: 99%
“…[16][17][18] Recently, epitaxial film growth has been achieved at lower temperatures (4700 1C) using pulsed laser deposition. 19 Most promisingly, film growth and crystallization at 600 1C has been achieved using a sputtering/ sulfurization approach. 20 Many of these techniques also require more complex and expensive equipment compared to the solution-phase growth and processing that is possible with the hybrid lead halide perovskites.…”
mentioning
confidence: 99%