Epitaxial yttrium silicide on (111) silicon by vacuum annealing

Gurvitch, M.; Levi, A. F. J.; Tung, R. T.; Nakahara, S.

doi:10.1063/1.98453

Cited by 50 publications

(7 citation statements)

References 12 publications

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“…This value can be compared to a resistivity of about 50 μ cm measured on thin yttrium silicide thin films. 18,19 This value is also comparable to the resistivity measured before on cobalt silicide nanowires using multitip scanning tunneling microscopes.…”

Section: Four Point Measurements At An Yttrium Silicide Nanowiresupporting

confidence: 71%

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Cherepanov¹,

Zubkov²,

Junker³

et al. 2012

Review of Scientific Instruments

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We present a multitip scanning tunneling microscope (STM) where four independent STM units are integrated on a diameter of 50 mm. The coarse positioning of the tips is done under the control of an optical microscope or scanning electron microscopy in vacuum. The heart of this STM is a new type of piezoelectric coarse approach called KoalaDrive. The compactness of the KoalaDrive allows building a four-tip STM as small as a single-tip STM with a drift of less than 0.2 nm/min at room temperature and lowest resonance frequencies of 2.5 kHz (xy) and 5.5 kHz (z). We present as examples of the performance of the multitip STM four point measurements of silicide nanowires and graphene.

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Section: Four Point Measurements At An Yttrium Silicide Nanowiresupporting

confidence: 71%

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Cherepanov¹,

Zubkov²,

Junker³

et al. 2012

Review of Scientific Instruments

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show abstract

“…The thickness of each layer is also identical to that of used in XPS. From the spectra, the peak of W(110) can be found up to 700 C. The peak of Y(002) is observed up to 250 C, but it completely disappears above 300 C. Instead, the peak from YSi 2 (100) is detected up to 700 C. Although the peak position is identical to that of YSi 2 , RE silicides, including YSi x have been reported to take the form of a silicon-insufficient disilicide phase, 17) which has not been confirmed yet in this experiment. Regularly shaped pit or pyramidal shaped defects are often observed on the surface of RE silicides formed by a solid-phase reaction.…”

Section: Resultsmentioning

confidence: 98%

Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n⁺-Source/Drain Contacts

Isogai

Tanaka

Goto

et al. 2009

jjap

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The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photoninduced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si − and Cl − , fragments and excited neutral atomic, Si * , fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.

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“…The di-silicide phase is stable up to 700 C. It should be noted that Rare Earth silicides tend to form silicon-insufficient-disilicide phase such as YSi 2Àx . 14) Figure 5 shows the relationship between sheet resistance, resistivity of yttrium silicide films and annealing temperature. In this experiment, we prepared silicon-on-insulator (SOI) substrate to avoid the parallel substrate resistance in calculating resistivity.…”

Section: Resultsmentioning

confidence: 99%

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

Isogai

Tanaka

Goto

et al. 2008

jjap

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As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its silicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being oxidized, N 2 sealed cleaning and transfer system and capping layer on low work function metals were employed. Fabricated Al/Y/p-type silicon Schottky barrier diode showed an excellent n-value. The extracted Schottky barrier height for electrons of yttrium silicide is as low as 0.3 eV. This result can be applied to form low contact resistivity silicide/n-type silicon contact, and contribute to lower the parasitic source drain series resistance of metal-oxide-semiconductor devices.

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Epitaxial yttrium silicide on (111) silicon by vacuum annealing

Abstract: The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon

Cited by 50 publications

References 12 publications

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n⁺-Source/Drain Contacts

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

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Epitaxial yttrium silicide on (111) silicon by vacuum annealing

Abstract: The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon

Cited by 50 publications

References 12 publications

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm

Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

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Product

Resources

About

Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n⁺-Source/Drain Contacts