In this paper, we demonstrate newly developed process technology to fabricate complementary metal-oxide-silicon field-effect transistors (CMOSFETs) having atomically flat gate insulator film/silicon interface on (100) orientated silicon surface. They include 1,200 C ultraclean argon ambient annealing technology for surface atomically flattening and radical oxidation technology for device isolation, flatness recovery after ion implantation, and gate insulator formation. The fabricated CMOSFET with atomically flat interface exhibit very high current drivability such as 923 and 538 mA/mm for n-channel MOSFET (nMOS) and p-channel MOSFET (pMOS) at gate length of 100 nm when combined with very low resistance source and drain contacts, four orders of magnitude lower 1= f noise characteristics when combined with damage free plasma processes, and one decade longer time dependent dielectric breakdown (TDDB) lifetime in comparison to devices with a conventional flatness. The developed technology effectively improves the performance of the silicon-based CMOS large-scale integrated circuits (LSI).

High pressures of hydrogen up to 3.0 GPa and temperatures up to 373 K were used as a pretreatment to introduce structural changes in the bulk and on the surface of Cu-Zr amorphous alloys which then were examined by means of x-ray diffraction and microscopy. The hydrogenative pretreatment of high hydrogen fugacity followed by annealing at 623 K, aimed at causing desorption of hydrogen, and an eventual exposure of the samples to air at room temperature to oxidize Zr, resulted in a distinct increase of catalytic activity in the dehydrogenation of 2-propanol. A tentative mechanism to account for the enhancement of the catalytic activity induced by the above combined pretreatment is discussed.

We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1−x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its silicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being oxidized, N 2 sealed cleaning and transfer system and capping layer on low work function metals were employed. Fabricated Al/Y/p-type silicon Schottky barrier diode showed an excellent n-value. The extracted Schottky barrier height for electrons of yttrium silicide is as low as 0.3 eV. This result can be applied to form low contact resistivity silicide/n-type silicon contact, and contribute to lower the parasitic source drain series resistance of metal-oxide-semiconductor devices.

The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photoninduced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si − and Cl − , fragments and excited neutral atomic, Si * , fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.