Epitaxial ZnO thin film transistors on 4H-SiC substrates

Kim, Ji Eun; Koo, Sang‐Mo

doi:10.1016/j.ceramint.2015.07.185

Cited by 7 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even though the Sample D exhibits a mobility of 20.43 cm 2 /V-sec, as compared to Sample C, our values are comparable to the other ZnO thin lms in the literature [49]. Further improvement in the bulk mobility of Sample E has been observed, which is the highest among the other reports [50].…”

Section: Optical Characterizationsupporting

confidence: 74%

Effect of Deposition Temperature in RF Sputtered ZnO Thin Films on ZnO TFT Performance

Muthusamy,

Bharatan,

Sivaprakasam

et al. 2024

Preprint

View full text Add to dashboard Cite

ZnO thin films are deposited using RF magnetron sputtering by varying argon: oxygen gas flow rates and substrate temperatures. The structural and optical characterization of ZnO thin films are systematically carried out using X-ray diffraction (XRD), SEM, UV-visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Dominant (002) Grazing incidence (GI) XRD peak on samples deposited at 300°C with Ar:O2 (16:4) ratio suggest c-axis orientation both on the bulk and surface of ZnO thin film. Increase in the crystallite grain size were observed as the deposition temperature is increased from Room temperature (RT) to 300°C, leading to the reduction in grain boundaries. Absorption analyses show the reduction in band-tail states within the bandgap, supporting annihilation of defects, on the samples deposited at 250°C and 300°C. XPS spectra confirm the improved O2 incorporation and reduction in oxygen vacancies in sample deposited at 300°C. Highest hall mobility of 46.09 cm2/V-sec has been observed on sample deposited at RT, and is dominated by defects. Whereas, films deposited at 250°C and 300°C exhibit Hall bulk mobilities of 20.43 cm2/V-sec and 31.63 cm2/V-sec, respectively. Further, bottom-gate ZnO thin film transistors (TFTs) are also fabricated on SiO2/p-Si substrate. Variation in substrate temperature showed performance enhancement in terms of leakage current, threshold voltage, sub-threshold swing and ION/IOFF ratio. Devices deposited at 300°C resulted in O2-rich surface through chemisorption, which led to the reduction in leakage current of upto 10-12A and 10-fold reduction in sub-threshold swing from 30V to 2.8V. Highest field-effect mobility of 1.1 cm2/V-sec has been achieved when the ZnO thickness in the TFT is reduced to 50 nm.

show abstract

Section: Optical Characterizationsupporting

confidence: 74%

Effect of Deposition Temperature in RF Sputtered ZnO Thin Films on ZnO TFT Performance

Muthusamy,

Bharatan,

Sivaprakasam

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments

2020

View full text Add to dashboard Cite

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the publication of more than 1,300 related papers. Although the number of researches on oxide semiconductors has continued to increase year by year, the average field‐effect mobility of oxide semiconductor thin‐film transistors (TFTs) has not shown significant improvement; from 2010 to 2018; the average field‐effect mobility of vacuum‐processed n‐type oxide TFTs is around 20 cm2/Vs. To investigate the obstacles for performance improvements, the latest progress and researches on vacuum‐processed oxide semiconductor TFTs for high performance over the past decade are highlighted, along with the pros and cons of each technology. Finally, complementary metal oxide semiconductor (CMOS) logic circuits composed of both n‐ and p‐type oxide semiconductor TFTs are introduced, and future prospects for this state‐of‐the‐art research on the oxide semiconductors are presented.

show abstract

Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

Lee

Kim

et al. 2018

Ceramics International

View full text Add to dashboard Cite

Epitaxial ZnO thin film transistors on 4H-SiC substrates

Cited by 7 publications

References 13 publications

Effect of Deposition Temperature in RF Sputtered ZnO Thin Films on ZnO TFT Performance

Effect of Deposition Temperature in RF Sputtered ZnO Thin Films on ZnO TFT Performance

High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments

Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

Contact Info

Product

Resources

About