Epitaxially grown double-drift silicon IMPATT diodes at 60 To 90 GHz

Howard, A.M.; Smith, David J.; Purcell, J.J.

doi:10.1049/el:19740352

Cited by 7 publications

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“…The p+n junction is formed by a shallow, 4OKeV, boron ion implantation dose of 5 x 1o14 ions/cm2, which is subsequently driven in approximately 3.3 microns to produce a graded p+n interface (1). For optimum X-band performance, diodes were found to have an effective active layer width of 0.2 -0.4 microns, as estimated by an optical interference method (2,3), and a breakdown voltage of 28-36 Volts.…”

Section: Introductionmentioning

confidence: 99%

High Efficiency X-Band Trapatt Amplifiers and Oscillators

Oxley¹,

Howard²,

Gordon³

et al. 1976

6th European Microwave Conference, 1976

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Silicon p+nx+ TRAPATT diodes have given X-band amplification with added power efficiencies of up to 25% and fundamental X-band oscillation with efficiencies as high as 35%. The diodes are fabricated by an Integral Heat Sink (IHS) technology and the p+n junction is formed by a combination of ion implantation and a drive-in period. Double-sided heat sinking has enabled oscillator performance to be extended to pulse-widths of greater than 5 microseconds, and mean output powers of 1 Watt have been recorded. Coaxial amplifier circuits produced small signal gains of 9dB, and large signal gains of 4dB with 1dB bandwidths of 500 MHz at 9.25 GHz with RF peak powers of over 12 watts. The design and performance of both coaxial and microstrip circuits is discussed.

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Section: Introductionmentioning

confidence: 99%