Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators

Azadeh, Saeed Sharif; Romero-García, Sebastián; Merget, Florian; Moscoso-Mártir, Alvaro; Driesch, Nils von den; Buca, D.; Witzens, Jeremy

doi:10.1117/12.2178790

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…However, it requires top-contact electrodes and silicon regrow on the upper surface, which is not compatible with traditional rib waveguides. Although some doping techniques in vertical direction such as in situ doping [48] or alternating implantation and epitaxial overgrowth steps [49] have been proposed, the fabrication process is still complex. Most of researchers choose a horizontal PN junction in the center of the rib waveguide with the same width of P and N areas due to the straightforward fabrication process of the doping profiles, as shown in Fig.…”

Section: Silicon Photonics Mach-zehnder Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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Section: Silicon Photonics Mach-zehnder Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

View full text Add to dashboard Cite

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Low V_π Silicon photonics modulators with highly linear epitaxially grown phase shifters

Azadeh¹,

Merget²,

Romero-García³

et al. 2015

Opt. Express

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We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.

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Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators

Cited by 2 publications

References 11 publications

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Low V_π Silicon photonics modulators with highly linear epitaxially grown phase shifters

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