Epitaxially Self‐Assemblied Quantum Dot Pairs

Wu, Jiang; Hu, Xian; Lee, Jihoon; Kim, Eun-Soo; Wang, Zhiming M.

doi:10.1002/adom.201300020

Cited by 20 publications

(9 citation statements)

References 131 publications

(182 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, the quantum coupled InAs/GaAs QD pair structures provide an approach to fabricate artificial QD molecules for implementing quantum computation schemes [9][10][11][12][13][14][15]. Generally, the fabrication of quantum coupled InAs/GaAs QD pair structures is implemented by growing two layers of InAs QDs with a thin GaAs spacer to form vertically aligned QD pairs.…”

Section: Introductionmentioning

confidence: 99%

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Liu¹,

Liang²,

Guo³

et al. 2016

Nano Online

View full text Add to dashboard Cite

The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al 0.5 Ga 0.5 As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al 0.5 Ga 0.5 As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Liu¹,

Liang²,

Guo³

et al. 2016

Nano Online

View full text Add to dashboard Cite

show abstract

“…Recently, many investigations have addressed the fabrication, characterization, and exploitation of self-assembled InAs/GaAs quantum dot (QD) structures due to their unique properties as well as their great potential for various optoelectronic devices [ 1 – 8 ]. In particular, the quantum coupled InAs/GaAs QD pair structures provide an approach to fabricate artificial QD molecules for implementing quantum computation schemes [ 9 – 15 ]. Generally, the fabrication of quantum coupled InAs/GaAs QD pair structures is implemented by growing two layers of InAs QDs with a thin GaAs spacer to form vertically aligned QD pairs.…”

Section: Introductionmentioning

confidence: 99%

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

et al. 2015

View full text Add to dashboard Cite

The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al0.5Ga0.5As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows different dependence on the intensity and wavelength of the excitation laser. Time-resolved PL measurements give a carrier tunneling time of 380 ps from the seed layer QDs to the top layer QDs while it elongates to 780 ps after inserting the thin Al0.5Ga0.5As barrier. These results provide useful information for fabrication and investigation of artificial QD molecules for implementing quantum computation applications.

show abstract

“…Since 1993, self-assembled quantum dots (QDs) grown by the Stranski-Krastanow (S-K) strain relaxation have gained great attention due to their possible optoelectronic device applications, such as semiconductor lasers, amplifiers, modulators, photovoltaic, and infrared photo-detectors [1][2][3][4][5][6]. As examples, QD hybrid structures with QDs coupled to a quantum well (QW) have been exploited in various material systems and optoelectronic devices where additional excess carriers can be provided through carrier transfer from the QW [7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

Wang

Sheng

Yuan

et al. 2018

Journal of Luminescence

View full text Add to dashboard Cite

Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum dot (QD)-In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using photoluminescence (PL) spectroscopy. This coupled hybrid nanostructure shows a single PL peak from the QD emission at low excitation intensity and a band filling behavior is observed as the excitation intensity increases, suggesting that there exists a channel to capture carriers from the QW to the QDs. Time resolved PL (TRPL) measurements extract a carrier tunneling time of 103.7ps, which is only one third of the theoretical prediction. A double-channel resonant carrier tunneling mechanism from the QW to the wetting layer and to the fifth excited state of the QDs and then carrier relaxation into lower discrete QD energy states is proposed to explain this fast 2 carrier tunneling. The double-channel resonant carrier tunneling mechanism is qualitatively supported through the analysis of the excitation-dependent PL spectra as well as the PL excitation spectra. These results enrich our understanding of carrier dynamics in coupled QD and QW hybrid structures.

show abstract

Epitaxially Self‐Assemblied Quantum Dot Pairs

Cited by 20 publications

References 131 publications

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

Contact Info

Product

Resources

About