1988
DOI: 10.1002/crat.2170230102
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Epitaxy of AIBIIIC semiconductors

Abstract: Dedicated to Professor Hermann NEELS on the occasion of his 75th birthday Epitaxial layers of AIBIIIClI compounds were grown by the flash evaporation technique and investigated using reflection electron diffraction. Geometric-structural considerations allow the prediction of epitaxial relationships and types of epitaxy (one-or three-dimensional, multiple orientation). These properties of the epitaxial layers were confirmed experimentally. Furthermore, the epitaxial temperature ranges, non-equilibrium phases, d… Show more

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Cited by 6 publications
(2 citation statements)
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“…Bulk Cu-In-Se exists primarily in either a tetragonal chalcopyrite or a high temperature cubic sphalerite phase. 16 The observed wide-angle X-ray scattering (WAXS) and elemental compositions of the Cu-In-Se QDs were found to be welldescribed by an ordered vacancy chalcopyrite structure. Analysis S2).…”
mentioning
confidence: 97%
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“…Bulk Cu-In-Se exists primarily in either a tetragonal chalcopyrite or a high temperature cubic sphalerite phase. 16 The observed wide-angle X-ray scattering (WAXS) and elemental compositions of the Cu-In-Se QDs were found to be welldescribed by an ordered vacancy chalcopyrite structure. Analysis S2).…”
mentioning
confidence: 97%
“…Bulk Cu-In-Se exists primarily in either a tetragonal chalcopyrite or a high temperature cubic sphalerite phase. 16 The observed wide angle X-ray scattering (WAXS) and elemental compositions of the Cu-In-Se QDs were found to be well described by an ordered vacancy chalcopyrite (OVC) structure. Analysis of 6 nm CuIn 1.5 Se 3 QDs WAXS data began by creating a chalcopyrite model unit cell using experimentally determined copper, indium, and selenium stoichiometries.…”
mentioning
confidence: 98%