Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

Abstract

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate

“…The reduction in TDD in these III-nitride films on Si is one of the most critical objectives for achieving high-performance devices, and thus great effort has been made to improve the quality of nitride epi-layers [10][11][12][13][14]. Among the methods, compliant substrate is highly promising as it can reduce the stress caused by mismatches and at the same time allow for the incorporation of nitride devices into silicon-based integrated circuits [15][16][17][18][19][20].…”