Epitaxy of high aspect ratio and wetting-layer-free InAs quantum dots on (Al)GaAs

Freundlich, A.; Gunasekera, M.; Rajapaksha, C.; Rusakova, I.

doi:10.1109/pvsc.2012.6317963

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Modified Continuum Elasticity Theory -Qd As Cylinder1

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2016

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“…This treats the QD and WL as non-overlapping entities. This method may also be appropriate for QDs with no wetting layer [14].…”

Section: Modified Continuum Elasticity Theory -Qd As Cylindermentioning

confidence: 99%

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Polly

Bailey

Grede

et al. 2016

Journal of Crystal Growth

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Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. These models have been assembled into a free application on nanoHUB for use by the community.

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“…This treats the QD and WL as non-overlapping entities. This method may also be appropriate for QDs with no wetting layer [14].…”

Section: Modified Continuum Elasticity Theory -Qd As Cylindermentioning

confidence: 99%

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Polly

Bailey

Grede

et al. 2016

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

Epitaxy of high aspect ratio and wetting-layer-free InAs quantum dots on (Al)GaAs

Cited by 1 publication

References 0 publications

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

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