Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon

Abstract

Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on 〈100〉 silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and 〈100〉 silicon substrate was found to be 4%.

Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon

“…The in-plane lattice parameter deduced from the RHEED pattern along the Si[110] azimuth is 4.03 Å , in agreement with the value observed in the high-temperature tetragonal structure of bulk SmSi 2 (4.041 Å ). 22 plane reduces the lattice mismatch from +25.6 to À5:2%, as has also been reported for the growth of orthorhombic GdSi 2 , 23) tetragonal DySi 2 , 17) or hexagonal LuSi 1:7 layers. 18) The lattice parameter variation deduced from the RHEED pattern taken along Si[110] is shown as a function of the growth time in Fig.…”

“…Figure 1(b) shows the RHEED pattern observed after the formation Thus the SmSi 2 lattice grows with a 45 rotation relative to the Si substrate lattice; the epitaxial growth of single crystalline SmSi 2 films is achieved with a preferential orientation SmSi 2 [100] k Si[110] on silicon (001) substrates. Such a rotation by 45 with respect to the Si(001) plane reduces the lattice mismatch from +25.6 to À5:2%, as has also been reported for the growth of orthorhombic GdSi 2 , 23) tetragonal DySi 2 , 17) or hexagonal LuSi 1:7 layers. 18) The lattice parameter variation deduced from the RHEED pattern taken along Si[110] is shown as a function of the growth time in Fig.…”

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical properties

“…Little attention has been dedicated to the growth of thin RESi layers on this face mainly due to a severe lattice mismatch. However the few results available demonstrate that ErSi 1.7 [17][18][19], DySi 1.7 [20], GdSi 2 [21] and LuSi 1.7 [22] can be grown epitaxially onto (0 0 1) oriented silicon surfaces. Recently, we have expanded this set by growing epitaxially SmSi 2 films on Si(0 0 1) [23].…”

GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

“…5 stage c), which belongs to orthorhombic gadolinium disilicide GdSi 2 (112) because this is likely to form at temperatures above 500 1C [12]. The deterioration of the Gd 2 O 3 layer at high temperatures could be explained by its nitridation and the appearance of the characteristic GdN (111) peak.…”