EPR study of defects produced by MeV Ag ion implantation into silicon

O'Raifeartaigh, Cormac; Barklie, R.C.; Lindner, J.K.N.

doi:10.1016/j.nimb.2003.11.081

Cited by 5 publications

(11 citation statements)

References 39 publications

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Section: Dependence Of Defect Type and Population On Ion Fluencementioning

confidence: 99%

“…The way in which the EPR spectrum of implanted silicon can vary with ion fluence is illustrated in figures 1 of the papers by Sealy et al [6] and O'Raifeartaigh et al [14]. For example, figure 1 of O'Raifeartaigh et al [14] shows spectra obtained for Si(111) samples implanted at 210 K with 4 MeV Ag ions; the silicon samples are n-type with resistivity of 100-150 cm. At the highest fluence shown of 8.1 × 10 13 Ag cm −2 the spectrum consists of an isotropic line with g = 2.0056 ± 0.0002 and peak-to-peak linewidth, B pp , of 4.2 ± 0.2 G. This spectrum is characteristic of amorphous silicon [17][18][19] and has been attributed to silicon dangling bonds in the amorphous region-the so-called D centres.…”

Section: Dependence Of Defect Type and Population On Ion Fluencementioning

confidence: 99%

“…Corbett and Karins [2] summarized in 1981 the status of our knowledge of ion-induced defects in semiconductors and included a summary of EPR measurements. Since then there have been further EPR studies such as those by Glaser et al [3], Waddell et al [4], Yajima et al [5], Sealy et al [6][7][8], Dvurechenskii et al [9], Varichenko et al [10], Mukashev et al [11], Abdullin et al [12], Poirier et al [13] and O'Raifeartaigh et al [14].…”

Section: Introductionmentioning

confidence: 99%

“…Its importance lies in the fact that its intensity exceeds that of all other spectra over a wide fluence range. Despite this importance only a rather small number of EPR reports [5][6][7][8][9][10][14][15][16] refer to this spectrum. One aim of this paper is to give more attention to these defects by drawing together those measurements that deal with them.…”

Section: Introductionmentioning

confidence: 99%

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Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

Barklie

O'Raifeartaigh

2005

J. Phys.: Condens. Matter

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Many of the defects created by ion implantation into silicon can be detected by electron paramagnetic resonance (EPR). The main defects observed are isolated point defects such as Si-P3 centres (neutral 4-vacancies),silicon dangling bonds in amorphous silicon and defects associated with the so-called resonance-a single broad anisotropic line; particular attention is paid to the latter defects as they have the highest population over a wide fluence range. This paper reports the effects on the nature and population of these defects of changing the fluence, mass and energy of the implanted ions as well as the effects of changing the implantation temperature.

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Section: Dependence Of Defect Type and Population On Ion Fluencementioning

confidence: 99%

Section: Dependence Of Defect Type and Population On Ion Fluencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

Barklie

O'Raifeartaigh

2005

J. Phys.: Condens. Matter

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“…These kinds of impurities, lattice defects and impurity defect complexes are referred to as deep centers. Several studies on low energy (keV to few MeV) iron ion implantation in silicon have been reported in the literature [3][4][5][6]. However, very few reports on the effects of swift heavy iron ions into silicon are available [7,8] …”

Section: Introductionmentioning

confidence: 99%

Swift Iron Ion Irradiation Induced Disorder in Crystalline Silicon

Kachhap¹,

Dubey²,

Dubey³

et al. 2013

JMSE-B

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Abstract:The p-type <111> silicon wafers have been irradiated with 70 MeV 56 Fe 5+ ions for various fluences varying from 1 × 10 12 to 5 × 10 14 ions cm -2 at room temperature. Irradiated samples were characterized by Fourier transform infrared, ultraviolet-visible and X-ray diffraction techniques. Near infrared studies showed the presence of irradiation induced defect state in the band gap which traps the free carriers and causes the decrease in optical band gap and free carrier concentration after irradiation. The interference fringe observed in the reflectance spectra indicates the existence of irradiated layer with different refractive index as of bulk silicon. Optical depth profile of sample irradiated with ion fluence 3 × 10 14 cm -2 showed that the irradiation induced damage/defects which vary with depth of the sample. The XRD studies revealed the presence of strain in the irradiated samples at higher ion fluence. The UV reflectance spectra revealed that the intensity of reflectance peak at 364 nm and 274 nm decreases with increasing ion fluence, indicating the increase of surface roughness after irradiation.

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