Equilibrium critical thickness for misfit dislocations in III-nitrides

Holec, David; Zhang, Yucheng; Rao, D.V. Sridhara; Kappers, Menno J.; McAleese, C.; Humphreys, C. J.

doi:10.1063/1.3033553

Cited by 103 publications

(78 citation statements)

References 24 publications

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“…The critical thickness of active layers in a p:In 0.175 Ga 0.835 N/n-In 0.16 Ga 0.84 N homo-junction was shown to be limited to 60 nm and 45 nm, respectively. 51 This value reduces significantly by increasing the In alloy content, to about 1 nm for In 0.2 Ga 0.8 N, 52 leading to the partial loss of incident light due to transmission through the device. XRD and I-V measurements shows degradation of electrical characteristics and crystal quality of a MOCVDgrown 24 nm InGaN layer by increasing the In content from 30% to 40%.…”

Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…One of the most important challenges that limits the performance of this material is the growth of high-quality relatively-thick InGaN layer. Due to large lattice mismatch between InN and GaN, InGaN a e-mail: walid.elhuni@geeps.centralesupelec.fr grown layer start to relax through dislocation defects after a certain thickness, called critical thickness [9,10]. This critical thickness depends on indium composition to the extend that at 30% of indium the critical thickness is less than 10 nm [11,12].…”

Section: Introductionmentioning

confidence: 99%

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

et al. 2017

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Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.

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“…Four different samples were (11)(12)(13)(14)(15)(16)(17)(18)(19)(20). Samples were grown with the GaN surface in different stages of coalescence, viz., islands (sample A), partly coalesced islands (samples B, C), and a fully coalesced continuous film (sample D).…”

Section: Methodsmentioning

confidence: 99%

Lattice distortions in GaN thin films on (0001) sapphire

Rao¹,

Beanland²,

Kappers³

et al. 2010

J. Phys.: Conf. Ser.

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Abstract. The GaN/sapphire microstructure and lattice distortions in GaN were investigated using convergent beam electron diffraction (CBED) and electron backscatter diffraction (EBSD). CBED studies showed small scale (<1º) triclinic strain in the electron microscope specimens with a tetragonal expansion (~0.001 nm) of the lattice along the GaN growth direction, which has been observed in continuous films as well as isolated or partly coalesced islands. The strains extend up to ~ 2 µm from the GaN/sapphire interface. EBSD studies show a clear mosaic structure. The largest component of the mosaic structure corresponds to a twist around the [0001] axis, perpendicular to the interface.

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Equilibrium critical thickness for misfit dislocations in III-nitrides

Cited by 103 publications

References 24 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Lattice distortions in GaN thin films on (0001) sapphire

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