Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Poklonski, N. A.; Горбачук, Н. И.; Shpakovski, S. V.; Wieck, A. D.

doi:10.1134/s1063784210100117

Cited by 9 publications

(5 citation statements)

References 16 publications

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“…1) when the space charge region captures the irradiation damaged region. This agrees also with the results [10,12] and can be considered as an additional support for the stated assumption.…”

Section: Resultssupporting

confidence: 80%

“…is a sign pointing to the presence of several relaxation time constants [11]. In the case of the absence of irradiation-induced defects, the equivalent circuit of a silicon diode can be represented by two serially connected parallel RC-circuits [12]. Thus, it can be assumed that arcs I and III in the complex plane plot of complex electric module correspond to the space charge region and to the diode base.…”

Section: Resultsmentioning

confidence: 99%

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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

et al. 2015

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

et al. 2015

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“…Reduction of tanδ(f) at 10 4 Hz is observed in all structures of this group, which indicates a decrease in the loss current. A similar dependence of tanδ(ω) with a minimum at electron irradiation of highly doped silicon was observed by the authors of [7,8]. The authors selected equivalent circuits, which included active and reactive components of resistance, to describe the obtained dependences and came to the conclusion about the existence of hopping conductivity at deep states.…”

supporting

confidence: 59%

Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses

et al. 2019

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The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by γ radiation promising for the creation of multifunctional resistive and capacitive devices.

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“…The surface activity of the source was 2·10 7 Bq·cm −2 . The diode equivalent circuit describing Z( f ) dependences at I dc = = 10 µA is shown in Figure 1b (see also [9]).…”

Section: Studied Structuresmentioning

confidence: 99%

Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles

Poklonski

Ковалев

Usenko

et al. 2023

Prib. metody izmer.

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In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. Despite the fact that such solutions have been introduced into the production of integrated circuits, the task of searching for new elements with high values of specific inductance is relevant. An alternative to coils and gyrators can be the effect of negative differential capacitance (i.e., inductive type impedance), which is observed in barrier structures based on silicon.The purpose of the work is to study the low-frequency impedance of Schottky diodes (Mo/n-Si) containing defects induced by α-particles irradiation and determination of the parameters of these defects by methods of low-frequency impedance spectroscopy and DLTS (Deep Level Transient Spectroscopy).Unpackaged Schottky diodes Mo/n-Si (epitaxial layer of 5.5 μm thickness and resistivity of 1 Ohm∙cm) produced by JSC “Integral” are studied. Inductance measurements were carried out on the as manufactured diodes and on the diodes irradiated with alpha particles (the maximum kinetic energy of an αparticle is 5.147 MeV). The impedance of inductive type of the Schottky diodes at the corresponding DC forward current of 10 µA were measured in the AC frequency range from 20 Hz to 2 MHz. DLTS spectra were used to determine the parameters of radiation-induced defects. It is shown that irradiation of diodes with alpha particles produces three types of radiation-induced defects: A-centers with thermal activation energy of E1 ≈ 190 meV, divacancies with activation energies of E2 ≈ 230 meV and E3 ≈ 410 meV, and Ecenters with activation energy of E4 ≈ 440 meV measured relative to the bottom of c-band of silicon.

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Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Cited by 9 publications

References 16 publications

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses

Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles

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