Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO&lt;sub&gt;2&lt;/sub&gt;/InGaAs NMOS

Binh, Huy; Ha, Minh Thien Huu; Huynh, Sa Hoang; Chang, Ch; Lin, J.; Yang, Kesong; Lin, Yu‐Ju; Chang, En-Chih

doi:10.7567/ssdm.2016.ps-6-03

Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 2016

DOI: 10.7567/ssdm.2016.ps-6-03

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Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO<sub>2</sub>/InGaAs NMOS

Huy Binh¹,

Minh Thien Huu Ha²,

Sa Hoang Huynh³

et al.

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Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO<sub>2</sub>/InGaAs NMOS

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