2019
DOI: 10.1016/j.jallcom.2018.08.279
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Er and Mg co-doped TiO2 nanorod arrays and improvement of photovoltaic property in perovskite solar cell

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Cited by 31 publications
(9 citation statements)
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“…The kink point between ohmic and TFL regimes reflects the onset voltage of the trap-filled limit region, which is represented as V TFL . The value of n trap can be deduced from following equation: 28,34,35…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The kink point between ohmic and TFL regimes reflects the onset voltage of the trap-filled limit region, which is represented as V TFL . The value of n trap can be deduced from following equation: 28,34,35…”
Section: Resultsmentioning
confidence: 99%
“…The kink point between ohmic and TFL regimes reflects the onset voltage of the trap-filled limit region, which is represented as V TFL . The value of n trap can be deduced from following equation: ,, where ε 0 (the vacuum permittivity) is 8.854 × 10 –14 F cm –1 , ε is the relative dielectric constant of the perovskite (32 for MAPbI 3 ), e is the elementary charge, and L is the thickness of the perovskite film. According to tests, the V TFL values decreased from 0.58 V for the SnO 2 based device to 0.38 V for the SnO 2 -TPFPB device …”
Section: Resultsmentioning
confidence: 99%
“…The large resistance of R sh‑2 gives rise to a serious impediment to carrier transport from ligands to the MB electrolyte and further decreases the amount of photogenerated carriers reacting with MB, which may be the reason for their restricted photochemical property (e.g., photocatalytic degradation property). By contrast, EIS spectra of γ-CsPbI 3 NCs fabricated with WS 2 reveal a sloped line in the low-frequency region and a semicircle in the high-frequency region, which is in accordance with the carrier-transfer reaction at the CsPbI 3 |WS 2 interface (shunt resistance R sh‑1 ) and Warburg impedance W s relevant to carriers at the WS 2 |MB electrolyte interface, respectively. These phenomena indicate that the electrochemical performances are highly related to the interfacial carrier-transfer process and diffusion control. Consistent with the variation in Table S5, it is clear that an efficient charge-transfer process will lead to a small R sh‑1 , and γ-CsPbI 3 NCs and WS 2 form a heterostructure where γ-CsPbI 3 NCs grow in-situ on the surface of WS 2 , which is beneficial for carrier transport.…”
Section: Resultsmentioning
confidence: 91%
“…[ 224–227 ] Those merits will be greatly attractive in enhancing the optical conversion ability and, thus, improve the solar spectrum utilization for high‐efficiency PSCs. For regulating carrier mobility, Chen et al [ 228 ] synthesized Er 3+ and Mg 2+ co‐doped TiO 2 nanorods array as an ETL by a hydrothermal method in PSCs ( Figure a). It was found that the bandgap was changed upward due to the introduction of Er 3+ and Mg 2+ in TiO 2 , which could result in noticeable enhancement of charge transport and injection at the ETL/perovskite interface.…”
Section: Doping Of Semiconductor Oxides Etlsmentioning
confidence: 99%
“…Reproduced with permission. [ 228 ] Copyright 2019, Elsevier Ltd. b) Schematic energy‐transfer mechanisms of the Er 3+ ions. Reproduced with permission.…”
Section: Doping Of Semiconductor Oxides Etlsmentioning
confidence: 99%