2010
DOI: 10.1002/pssc.200982705
|View full text |Cite
|
Sign up to set email alerts
|

Erbium‐doped nanocrystalline silicon thin films produced by RF sputtering ‐ annealing effect on the Er emission

Abstract: In the present work, erbium doped nanocrystalline silicon thin films were produced by reactive magnetron sputtering on glass substrates under different conditions (substrate temperature and Er content). The film structure was studied using Raman spectroscopy. The chemical composition was determined using the RBS technique. All the samples show sharp 4I13/2 → 4I15/2 intra‐4f11 emission of Er3+ related centres with its maximum positioned at the1.54 μm. However, the intensity of this transition (strongly dependen… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2012
2012
2021
2021

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 14 publications
0
0
0
Order By: Relevance