Erratum: Characterization of 5-Aminotetrazole as a Corrosion Inhibitor in Copper Chemical Mechanical Polishing [J. Electrochem. Soc., 152, C827 (2005)]

Lee, Jun Young; Kang, Mincheol; Kim, Jae Jeong

doi:10.1149/1.2141656

Cited by 10 publications

(12 citation statements)

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“…39 In this study, 3-amino-1,2,4-triazole, which has a similar structure to other Cu corrosion inhibitors such as benzotriazole or 5-aminotetrazole, was added to the electrolyte in order to suppress further growth. 40 The addition of 3-amino-1,2,4-triazole strongly enhanced nucleation density and considerably improved the coverage of 0.1 s into deposition compared to cases without suppressor ͑Fig. 12͒.…”

Section: D392mentioning

confidence: 99%

Silver Direct Electrodeposition on Ru Thin Films

Koo¹,

Cho

Lee

et al. 2008

J. Electrochem. Soc.

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Electrodeposition of Ag was performed on Ru thin films following electrochemical reduction of native Ru oxide. Oxide reduction in a tetramethylammonium hydroxide solution was critical for the formation of continuous Ag film, and a large overpotential was important for high-density nucleation. From a kinetics viewpoint, the thermal stability of the Ag film was improved by the application of a more negative potential, which suggested that better nucleation density at the initial stage of growth induced better substrate adhesion. Suppression of growth by addition of an organic additive generated a larger and more uniformly distributed initial population of Ag particles, and as a result a smooth film was obtained.

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Section: D392mentioning

confidence: 99%

Silver Direct Electrodeposition on Ru Thin Films

Koo¹,

Cho

Lee

et al. 2008

J. Electrochem. Soc.

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“…To inhibit Cu corrosion, benzotriazole ͑BTA͒ or 5-aminotetrazole ͑ATRA͒ is commonly used. [9][10][11] An organic additive of the carboxylic group was added as a complexing agent to improve the removal rate of Cu. At present, citric acid, [12][13][14] oxalic acid, 15 and glycine [16][17][18] were introduced as the complexing agent and their properties and performance investigated.…”

mentioning

confidence: 99%

Effects of OH Radicals on Formation of Cu Oxide and Polishing Performance in Cu Chemical Mechanical Polishing

Kang

Nam²,

Won³

et al. 2008

Electrochem. Solid-State Lett.

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The amount of OH radicals generated varied according to the complexing agent or Cu ion, and the accelerating effect of OH radicals on the rate of Cu oxide formation was found in acidic pH. When Cu͑I͒ ions and oxalic acid were added to H 2 O 2 -based slurry, the decreases in etch and removal rates of Cu were observed because more generation of OH radicals resulted in the formation of thicker Cu oxide compared to additive-free slurry. Therefore, proper control of the formation and dissolution of Cu oxide led to an increase in etch and removal rates.Cu has been introduced as an interconnection material due to its low electrical resistance and high resistance to electromigration compared to W or Al. 1-3 The damascene process based on chemical mechanical polishing ͑CMP͒, which is used to remove the protruding part and planarize the whole wafer surface, makes it possible to use Cu as an interconnection material.During Cu CMP, the Cu surface is oxidized by an oxidizing agent through the oxidation of Cu to cuprous or cupric ions ͑Eq. 1͒. Among such oxidizing agents, hydrogen peroxide ͑H 2 O 2 ͒ is widely used for Cu CMP and its properties have been widely investigated. 4-8 Also, various organic additives were added into the slurry to maximize specific characteristics during the Cu CMP. To inhibit Cu corrosion, benzotriazole ͑BTA͒ or 5-aminotetrazole ͑ATRA͒ is commonly used. 9-11 An organic additive of the carboxylic group was added as a complexing agent to improve the removal rate of Cu. At present, citric acid, 12-14 oxalic acid, 15 and glycine 16-18 were introduced as the complexing agent and their properties and performance investigated. The complexing agents react with oxidized Cu and form complexes on the Cu surface. In an acidic pH, Cu cations, especially Cu͑I͒ ions, react with H 2 O 2 and then H 2 O 2 is converted into OH radicals and hydroxyl ions through the so-called Fenton reaction ͑Eq. 2͒. 19 The oxidation potential of the OH radical is higher than that of H 2 O 2 , which is well known to be one of the most powerful oxidizing agents Cu → Cu + + e or Cu 2+ + 2e ͓1͔It has been reported that OH radicals enhanced the removal rates of Cu in an H 2 O 2 -based slurry, including an amino acid at alkaline solution, 16 and that citric acid and oxalic acid improved the removal rate of Cu in the acidic solution. When using citric acid and oxalic acid as the complexing agent in weak acidic pH, the effect of OH radicals in the slurry on Cu CMP performance has not been reported. Therefore, the objective of this study is to understand the effect of OH radicals on Cu CMP. ExperimentalElectrochemical measurements.-For the electrochemical experiments, a 99.9% Cu rod with a surface area of 0.5 cm 2 was used. A Pt electrode and a saturated calomel electrode ͑SCE͒ were used as a counter and a reference electrode, respectively. Potentiodynamic studies were performed with an EG&G model 263 potentiostat/ galvanostat corrosion measurement system. The potentiodynamic polarization measurements were obtained with a scan rate of 10 mV/s a...

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“…Previously, our group showed that ATRA was an effective corrosion inhibitor for use in Cu CMP slurries. 24 On the basis of that result, ATRA was selected as a candidate corrosion inhibitor in this study and the effects of the addition of ATRA on the polishing rate and static etch rate were investigated. Figure 11a shows the results of Cu polish rate and static etch rate with changing ATRA concentration and Fig.…”

Section: H956mentioning

confidence: 99%

Development of a Copper Chemical Mechanical Polishing Slurry at Neutral pH Based on Ceria Slurry

Kim

Kwon

Kang³

et al. 2010

J. Electrochem. Soc.

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We investigated the applicability of ceria-based copper ͑Cu͒ chemical mechanical polishing slurry based on commercial ceria slurry, which contained the anionic dispersing agent. Through the zeta-potential and particle size measurements, the neutral pH condition was verified to be favorable to maintain the dispersion stability and glycine was selected as a main complexing agent. Cu polish rate tests with varying glycine concentrations and solid contents of ceria were performed and the possible reaction mechanisms were discussed. Variation in the H 2 O 2 concentration with a fixed amount of glycine affected the maximum polishing rate, whereas variation in the glycine concentration changed the H 2 O 2 concentration that resulted in the maximum polishing rate. The relationship between Cu oxide thickness and the polishing rate was investigated using coulometric reduction method analysis and X-ray photoelectron spectroscopy analysis. Surface improvement was successfully achieved with the addition of 5-aminotetrazole. According to these experiments, suggestions for ceria-based Cu slurry formulations that have high Cu removal rates and smooth polished surfaces are provided.In the copper chemical mechanical polishing ͑Cu CMP͒ process, the optimization of the additives in Cu CMP slurries has been widely investigated to enhance the Cu removal rate, especially in acidic pH ranges. 1-5 However, such acidic Cu CMP slurries have some disadvantages, such as corrosion issues and dishing problems. To overcome these weaknesses, the development of neutral pH Cu CMP slurries has been considered. To improve the Cu removal rate under neutral pH conditions, complexing agents that have both carboxylic functional groups and amine functional groups have been extensively studied. [6][7][8][9] Ceria slurry has been widely used in the shallow trench isolation CMP process because of its characteristics of high oxide to nitride selectivity. In the earlier stages of using ceria slurry in the semiconductor business, the use of ceria slurry had difficulties to widen the application to other CMP steps due to high costs and scratch defects. With the development of the manufacturing technology of ceria slurry, the reduction of large particles that can cause scratch defects can be achieved, resulting in the reduction of scratch defects. Basim et al. 10 and Yang et al. 11 suggested that material removal rate is proportional to the total contact area between abrasive particles and the wafer surface. Based on their works, it can be expected that the increase in the contact area between abrasives and the polished layer would be useful for enhancing the removal rate. Because ceria is softer than silica and readily breaks down into smaller particles, it may be beneficial for reducing scratch defects and increasing removal rate. Based on these characteristics, trials are just beginning to adapt ceria slurries in metal CMP processes ͑especially W, Cu͒ to obtain high performance slurries.This study focused on the possibility of adapting ceria abrasives to Cu ...

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Erratum: Characterization of 5-Aminotetrazole as a Corrosion Inhibitor in Copper Chemical Mechanical Polishing [J. Electrochem. Soc., 152, C827 (2005)]

Abstract: On page C831, Fig. 10 should have appeared as below. Figure 10. Inline SEM images ͑a͒ BTA and ͑b͒ ATRA.

Cited by 10 publications

References 0 publications

Silver Direct Electrodeposition on Ru Thin Films

Silver Direct Electrodeposition on Ru Thin Films

Effects of OH Radicals on Formation of Cu Oxide and Polishing Performance in Cu Chemical Mechanical Polishing

Development of a Copper Chemical Mechanical Polishing Slurry at Neutral pH Based on Ceria Slurry

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