Hot-electron-based
photovoltaics has great potential to overcome
the limitations of semiconductor-based photovoltaics. However, hot-electron
applications still suffer from low quantum efficiency, associated
with inefficient hot-electron collection and a poor absorption coefficient.
Here, we demonstrate that hot-electron flow on a plasmonic Ag nanodiode
is highly enhanced by depositing a MAPbI3 thin film. Femtosecond
transient absorption spectra reveal the hot-electron dynamics, where
the hot electrons from MAPbI3 denote significantly prolonged
relaxation time over those from Ag, which can facilitate the internal
photoemission process. By comparing the unraveled dynamics of MAPbI3 on plasmonic Ag to those on a plasmonic Au structure, we
found that the former combination exhibits enhanced hot-electron transfer,
which is correlated to higher hot-electron flow. We believe that the
suggested structure in this work can provide a useful alternative
model to design sensitive hot-electron-based photovoltaics.
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