Erratum: “Early nitriding stage of evaporated-Ti thin films by N-ion implantation” [J. Vac. Sci. Technol. A <b>15</b>, 1848 (1997)]

Kasukabe, Y.; Takeda, Shuntaro; Fujino, Y.; Yamada, Y.; Nagata, Satoko; Kishimoto, Masashi; Yamaguchi, Shimpei

doi:10.1116/1.580972

Cited by 4 publications

(14 citation statements)

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“…The reflections indicated by the four-index system and the three-index system with asterisks are obtained from the hcp-Ti and TiH x crystallites, respectively. The growth of both hcp-Ti and TiH x agrees with the results of previous papers [14][15][16]: Ti films deposited on NaCl substrates spontaneously absorbed hydrogen (H) atoms from the interior of the NaCl, and then Fig. 1(a), whereas the 00 · 2 and 01 · 1 reflections in Fig.…”

Section: A Deposited Ti Thin Filmssupporting

confidence: 80%

“…Recently, it was reported that NaCl-type (110)-and (001)-oriented TiN y crystallites were 'epitaxially' grown by the N-implantation into CaF 2 -type (110)-oriented TiH x and (03 · 5)-oriented hcp-Ti in the deposited Ti films held at room temperature (RT), respectively [14][15][16]; here, the term 'epitaxially' is used to denote the situation of partially inheriting the atomic arrangements of unimplanted TiH x and hcp-Ti. However, the detailed 'epitaxial' nitriding processes of Ti films with the domains of TiH x and hcp-Ti during N-implantation, as well as the epitaxial growth processes of (110)-oriented TiH x and (03 · 5)-oriented hcp-Ti in deposited Ti films, have not yet been sufficiently understood.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Deposited and Nitrogen-implanted Titanium Films

Wang

Yamamura

Yamamoto

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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Deposited Ti films and TiN films formed by nitrogen-implantation were investigated by transmission electron microscope (TEM) observation and electron energy loss spectroscopy (EELS). Titanium films in the thickness of 100 nm were deposited by an electron beam heating method onto thermally cleaned NaCl(001) surfaces held at room temperature under ultra-high vacuum. In the deposited Ti films, there coexist mainly (03 · 5)-oriented hcp-Ti and (110)

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Section: A Deposited Ti Thin Filmssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Characterization of Deposited and Nitrogen-implanted Titanium Films

Wang

Yamamura

Yamamoto

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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“…[1][2][3][4][5] These studies have suggested that epitaxial TiN films have superior effectiveness as corrosion-resistant coatings and diffusion barriers to that of polycrystalline TiN films. 19,20 The as-prepared Ti films consisted of (03•5)-and (2 1•0)-oriented hcp-Ti, and ͑110͒oriented CaF 2 -type TiH x : Ti films evaporated on NaCl substrates spontaneously absorbed hydrogen ͑H͒ from the interior of the NaCl, and then TiH x partially grew in addition to hcp-Ti, [19][20][21][22][23][24] while the N-implanted Ti films consisted of ͑001͒and ͑110͒-oriented TiN y . [6][7][8][9][10][11][12][13][14][15][16] Recently, it has been clearly demonstrated that ͑001͒-oriented TiN y ͑NaCl-type͒ is epitaxially grown by N implantation into (03•5)-oriented hcp-Ti grown on NaCl substrates held at 250°C.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of TiN films by N-implantation into evaporated Ti films

Kasukabe

Saito

Suzuki

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Erratum: "Early nitriding stage of evaporated-Ti thin films by N-ion implantation" [J.Nitrogen ions (N 2 ϩ ) with 62 keV have been implanted into 100-nm-thick Ti films prepared by the evaporation on thermally cleaned NaCl substrates held at room temperature. The epitaxial growth process of resultant TiN films has been studied by transmission electron microscopy, Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the ͑110͒-oriented TiN y is formed by nitriding the ͑110͒-oriented TiH x in the as-deposited Ti film without change of the orientation of the fcc-Ti sublattice, and that the ͑001͒-oriented TiN y and the ''rotated'' ͑110͒-oriented TiN y rotated by ϳ9°with respect to the ͑110͒-oriented TiN y , respectively, are epitaxially formed by the transformation of (03•5)-oriented hcp-Ti to ͑001͒-oriented fcc-Ti and by the transformation of (2 1•0)-oriented hcp-Ti to rotated ͑110͒-oriented fcc-Ti. Then, the inheritance of the square atomic arrangement and parallelogram atomic arrangement of hcp-Ti plays a very prominent role in the epitaxy of the ͑001͒-oriented and the rotated ͑110͒-oriented TiN y , as well as the occupation of N in octahedral sites of the fcc-Ti. The increase in the lattice constants of hcp-Ti, especially, the steeper increase of the lattice constant, c, by the N occupation can be considered as one of the driving forces for the hcp-fcc transformation. The growth mechanism of epitaxial TiN y films is discussed.

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“…The detailed descriptions of the preparation of Ti films were presented in earlier papers [18,19]. Carbon ions (C + ) of 26 keV were implanted into the deposited Ti films at an angle of 30…”

Section: Methodsmentioning

confidence: 99%

“…We focus our attention on the transformation process from the oriented hcp-Ti to preferentially oriented TiC y in the film with the dose of C, taking account of the variation of the lattice constants of hcp-Ti and TiC y . The results were also discussed with those of a self-consistent charge discrete variational (DV)-Xα molecular orbital (MO) calculation [17] and the epitaxial hcp-fcc transformation mechanism of hcp-Ti by N-implantation [18,19].…”

Section: Introductionmentioning

confidence: 99%

Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

Nishida

Wang

Yamamura

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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Observations of the crystallographic structural changes of deposited Ti films (100 nm thick) during Cimplantation were made by using transmission electron microscope (TEM) for the purpose to elucidate the carbonizing processes of Ti films. The Ti films were deposited by an electron beam heating method onto thermally cleaned NaCl (001) surfaces held at room temperature (RT). Both the 200 kV conventional TEM and the 400 kV analytical high resolution TEM combined with ion accelerators were used. The deposited Ti films consisted of mainly (03 · 5)-oriented hcp-Ti and (110)-oriented CaF2 type TiHx (x ∼ 1.5). Carbon ions (C + ) with 26 keV were implanted into the Ti films held at RT in the 400 kV TEM. The H atoms which constituted TiHx were released from the as-deposited Ti films during the early stage of C-implantation. In the C-implanted Ti film (C/Ti=0.54), there coexisted (001)-and (110)-oriented NaCl-type TiCy and a small amount of hcp-Ti. The results of TEM observation indicated that (001)-and (110)-oriented TiCy were epitaxially formed by the transformation of (03 · 5)-oriented hcp-Ti and (110)-oriented TiHx, respectively. In the cases, the hcp-Ti sublattice is transformed into fcc-Ti sublattice of TiCy with inheritance of square atomic arrangement of hcp-Ti. The hcp-fcc transformation was discussed with the results of a self-consistent charge discrete variational (DV)-Xα molecular orbital (MO) calculation.

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Erratum: “Early nitriding stage of evaporated-Ti thin films by N-ion implantation” [J. Vac. Sci. Technol. A 15, 1848 (1997)]

Cited by 4 publications

References 0 publications

Characterization of Deposited and Nitrogen-implanted Titanium Films

Characterization of Deposited and Nitrogen-implanted Titanium Films

Epitaxial growth of TiN films by N-implantation into evaporated Ti films

Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

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