Erratum: ‘‘Ensemble Monte Carlo study of electron transport in degenerate bulk GaAs’’ [J. Appl. Phys. <b>70</b>, 6854 (1991)]

Mansour, Nabil S.; Diff, Karim; Brennan, Kevin F.

doi:10.1063/1.359617

Cited by 5 publications

(9 citation statements)

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“…In ͑c͒, for a parabolic band degenerate and nondegenerate cases give the same results. 4. We remark that the separation into a diagonal and offdiagonal part should be interpreted carefully when treating degeneracy, since, in contrast to what happens in a semiclassical MC simulation, in a fully quantum mechanical treatment particles should be considered indistinguishable.…”

Section: ͓S0003-6951͑96͒03736-9͔mentioning

confidence: 99%

Monte Carlo calculations of hot-carrier noise under degenerate conditions

Tadyszak

Danneville

Cappy

et al. 1996

Applied Physics Letters

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Section: ͓S0003-6951͑96͒03736-9͔mentioning

confidence: 99%

Monte Carlo calculations of hot-carrier noise under degenerate conditions

Tadyszak

Danneville

Cappy

et al. 1996

Applied Physics Letters

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“…The new simulator contains an improved means of calculating the electrons' new position and velocity following a drift using the approach of Fischetti and Laux. 12 Other than the abovementioned alterations, the simulator is essentially the same as that reported earlier for the electron-field model calculations 10 and for the Poisson equation solution method. 13,14 The steady-state calculations are performed for GaAs assuming a free-electron concentration of 1.0ϫ10 18 cm Ϫ3 and at 300 K. The dispersion relationship used for both the electron-field and electron-electron models is determined numerically by finding the zeros of the real part of the q-and -dependent dielectric function.…”

Section: Model Descriptionmentioning

confidence: 96%

“…10 For brevity we only include the details of improvements made to the simulator and the updated selfconsistency calculation. Self-consistency within the electron-electron and electron-field models was added by updating the electron temperature every femtosecond.…”

Section: Model Descriptionmentioning

confidence: 99%

“…In this formulation, called here the electron-electron model, 4 the mean time between plasmon emission events is determined from the decay time of the quasiparticle. Though we have examined the predictions of these two models in the past 7 it has been recently pointed out 8 that our previously published formulation of the electron-plasmon emission rate 7,9,10 is incorrect. It is the purpose of this work to assess how the corrected expression for the electron-field model with selfconsistency added compares to both an improved selfconsistent electron-electron model formulation as well as the semiclassical formulation of the electron-plasmon interaction.…”

Section: Introductionmentioning

confidence: 99%

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Effect of inclusion of self-consistently determined electron temperature on the electron–plasmon interaction

Mansour¹,

Diff²,

Brennan³

1996

Journal of Applied Physics

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In this article, we present a comparison of three different formulations of the carrier-plasmon interaction in semiconductors that can be included within an ensemble Monte Carlo simulation. Two of the formulations, referred to here as the electron-field and electron-electron methods, can be considered as first-order quantum mechanical approaches in which the electron-plasmon interaction is treated as an additional scattering mechanism. The electron-field model formulation is corrected from previously published work following the approach of Popov, Solodkaya, and Bagaeva ͓Physica B 217, 118 ͑1996͔͒. The corrected electron-field model is compared to an improved, self-consistent electron-electron model and to the semiclassical method, by which the Poisson equation is solved self-consistently, for both steady-state bulk and transient transport. It is found that the corrected electron-field model, which is also formulated as self-consistent, and the new improved self-consistent electron-electron model predict nearly identical results in both steady and transient states. It is further found that the self-consistent quantum mechanical models compared to the semiclassical model do not yield precisely the same result, in agreement with previously published results. The addition of self-consistency to these models results in nearly equal plasmon occupation factors for both absorption and emission, leading to nearly equal absorption and emission rates at high carrier temperatures. Some caution must be exercised, however, in these results since a full temperature-dependent dielectric function has not been employed and it is possible that the quantum mechanical models may need some revision at high carrier temperatures. Nevertheless, the self-consistent quantum mechanical models predict the net average energy relaxation to be small, due to nearly equal absorption and emission rates, consistent with the semiclassical model.

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“…Standard Monte Carlo simulations does not take into account effects caused by high concentration of electrons and more developed models should be used. 1 First an important effect is degeneracy of electron gas. In most Monte Carlo ͑MC͒ simulations this effect is neglected for simplicity and scattering probabilities are calculated without Pauli exclusion principle.…”

Section: Introductionmentioning

confidence: 99%

Ensemble Monte Carlo study of the influence of plasmon–phonon coupled modes on hot electron transport in GaAs

Borowik

1997

Journal of Applied Physics

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Minority electron mobilities in GaAs, In 0.53 Ga 0.47 As , and GaAs 0.50 Sb 0.50 calculated within an ensemble Monte Carlo modelThe ensemble Monte Carlo method is used to calculate the velocity-field characteristics in highly doped GaAs. A new technique is developed in order to include into Monte Carlo simulations electron interactions with coupled plasmon-polar optical phonon modes. Calculations are performed for an electron concentration level equal to 7ϫ10 17 cm Ϫ3 . Results of simulations are compared with model when coupling is neglected. Various models of screening length and screening by nonequilibrium electron gas are also considered.

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Erratum: ‘‘Ensemble Monte Carlo study of electron transport in degenerate bulk GaAs’’ [J. Appl. Phys. 70, 6854 (1991)]

Cited by 5 publications

References 0 publications

Monte Carlo calculations of hot-carrier noise under degenerate conditions

Monte Carlo calculations of hot-carrier noise under degenerate conditions

Effect of inclusion of self-consistently determined electron temperature on the electron–plasmon interaction

Ensemble Monte Carlo study of the influence of plasmon–phonon coupled modes on hot electron transport in GaAs

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