Erratum: Fluorocarbon high density plasmas. VII. Investigation of selective SiO2-to-Si3N4 high density plasma etch processes [J. Vac. Sci. Technol. A <b>14</b>, 2127 (1996)]

Zhang, Ying; Oehrlein, G. S.; Bell, F. H.

doi:10.1116/1.580229

Cited by 17 publications

(32 citation statements)

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“…Discharges fed with CF 4 / H 2 were also studied since addition of H 2 to the CF 4 discharge reduces the fluorine density. 13,15,40 The study of H 2 was also motivated by a prior study that had shown reduced PR roughening for CF 4 / H 2 discharges. 18 We also studied Ar addition to CF 4 / H 2 discharges to investigate the effect of Ar + ion bombardment in conjunction with the CF 4 / H 2 chemistry.…”

Section: A Influence Of Surface Composition On Polymer Etching Ratementioning

confidence: 99%

“…The influence of fluorocarbon gas on the process result was clarified further by varying the Ar percentage in C 4 F 8 / Ar percentage or CF 4 / Ar. Since H 2 addition to CF 4 reduces the gas phase fluorine atom density, 12,13,28 and also has been shown to reduce PR damage, 18 CF 4 / 40% H 2 and CF 4 / H 2 / Ar discharges were also employed.…”

Section: B Plasma Processingmentioning

confidence: 99%

“…It is known that discharges fed with C 4 F 8 / Ar produce a high amount of FC film deposition with little atomic fluorine in the discharge, [8][9][10] whereas use of CF 4 / Ar/ H 2 gas mixtures results in F-rich to F-deficient plasmas ͑depending on the amount of H 2 used͒ that exhibit much lower FC film deposition rates than C 4 F 8 / Ar discharges. [11][12][13][14][15][16] By employing FC discharges fed with either C 4 F 8 / Ar or CF 4 / Ar/ H 2 gas mixtures, we were able to distinguish the influence of fluorocarbon fragment deposition from polymer surface fluorination by gas phase fluorine atoms on plasma etching resistance and surface roughness evolution of organic materials. The role of the polymer backbone in plasma durability was established by comparing prototypical photoresist materials and a model polymer ͑193 nm PR, 248 nm PR, and p-MAMA͒.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

Engelmann¹,

Bruce²,

Weilnboeck³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report a study of the impact of surface chemical factors on etch rates along with surface and line edge roughness introduction for prototypical photoresist (PR) materials and structures during plasma-based pattern transfer employing fluorocarbon (FC) discharges. For selected photoresist materials and model polymers (193nm PR, 248nm, PR, and polymethyladamantyl methacrylate), the influence of bulk polymer properties on plasma durability was clarified by comparing etch rates, surface roughness introduction, and profile evolution of nanostructures. They studied the effects of both fluorocarbon fragment deposition and polymer surface fluorination by gas phase fluorine atoms on plasma etching resistance and surface roughness evolution of the organic materials by comparing discharges fed with C4F8∕Ar or CF4∕Ar∕H2 gas mixtures. The spatial frequency distribution of surface roughness was obtained using fast Fourier transformation of atomic force microscopy data. A graphitic layer was formed for Ar containing discharges on the polymer surfaces. Fluorocarbon deposition on the damaged photoresist affected roughening in two opposing ways: ion-induced mixing with the damaged polymer layer increased surface roughening, whereas for simple FC precursor deposition a reduction in surface roughness was seen. The latter effect was especially important during profile evolution of three-dimensional structures. Fluorination of the photoresist surfaces by fluorine-rich plasma increased polymer etching yields, and for highly fluorinated surfaces inhibited the formation of the graphitic surface layer. The destruction of the adamantyl structure is usually found in fluorocarbon/argon discharges and is a major origin of roughness evolution for 193nm PR materials. Process conditions having high etch yields were found to improve the roughness results of 193nm PR after etch. The fluorination of the photoresist materials prevented the formation of characteristic small scale roughness features at the cost of large scale roughness introduction. Use of low energy density process conditions prevented the introduction of large scale roughness and can be explained by suppression of surface roughness growth by an ion-induced transfer mechanism. Alternatively, CF4∕H2 processing also showed improved roughness results due to a separate layer deposition of the fluorocarbon film on top of the photoresist material. The etch results for all process conditions can be combined in a surface roughening model where the roughening behavior of the film scales linearly with the energy density delivered to the polymer surface during processing. Even for a range of feedgas chemistries, adamantyl-containing polymers show enhanced roughening rates, suggesting that the instability of the adamantyl structure used in 193nm PR polymers is the performance limiting factor for processing these PR materials.

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Section: A Influence Of Surface Composition On Polymer Etching Ratementioning

confidence: 99%

Section: B Plasma Processingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

Engelmann¹,

Bruce²,

Weilnboeck³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…Etch processes employing low pressure high density fluorocarbon discharges are expected to meet these demands, and have been studied extensively. [1][2][3][4][5][6] Low pressure high density fluorocarbon plasma processes, however, have been found to suffer from process drifts. 7 At low pressure, plasma-wall interactions are of significant importance in determining the discharge chemistry.…”

Section: Introductionmentioning

confidence: 99%

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Schaepkens

Bosch

Standaert

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

102

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The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF 3 , C 3 F 6 , and C 3 F 6 /H 2 , indicate that the reactor wall temperature is an important parameter in the etch process. Adequate temperature control can increase oxide etch selectivity over nitride and silicon. The loss of fluorocarbon species from the plasma to the walls is reduced as the wall temperature increased. The fluorocarbon deposition on a cooled substrate surface increases concomitantly, resulting in a more efficient suppression of silicon and nitride etch rates, whereas oxide etch rates remain nearly constant.

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“…Silicon nitride is used as a passivation layer that protects circuits from mechanical and chemical attack, or as an etch stop layer, enabling the fabrication of certain damascene and self-aligned contact (SAC) structures. Selective SiO 2 and Si 3 N 4 etching have been demonstrated in several systems [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Investigation of oxide layer removal mechanism using reactive gases

Kim

Lim

Kim

et al. 2015

Microelectronic Engineering

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Erratum: Fluorocarbon high density plasmas. VII. Investigation of selective SiO2-to-Si3N4 high density plasma etch processes [J. Vac. Sci. Technol. A 14, 2127 (1996)]

Cited by 17 publications

References 0 publications

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Investigation of oxide layer removal mechanism using reactive gases

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