Erratum: “Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors” [J. Appl. Phys. <b>89</b>, 2873 (2001)]

Baniecki, J. D.; Laibowitz, R. B.; Shaw, T. M.; Parks, C.; Lian, J.; Xu, Hua; Y., Q.

doi:10.1063/1.1625086

Cited by 17 publications

(29 citation statements)

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“…13 However, the realization of this idea is a task with many obstacles, because it requires the fabrication of ultrathin films retaining pronounced ferroelectric properties at a thickness of only a few unit cells. Although there are several publications on the electron tunneling in ferroelectrics, [13][14][15][16][17][18] the experimental studies of the tunneling across ferroelectric barriers just started. [19][20][21] Since ferroelectricity is a collective phenomenon like superconductivity and magnetism, thin films are expected to be ferroelectric only above some minimum film thickness.…”

Section: Introductionmentioning

confidence: 99%

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

et al. 2005

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We present the concept of ferroelectric tunnel junctions ͑FTJs͒. These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the currentvoltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of an internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the nonvolatile memory applications because of a larger resistance on/off ratio.

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Section: Introductionmentioning

confidence: 99%

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

et al. 2005

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“…Although the effective mass can be different from the band mass in the interface region, it is not expected that it be smaller; note also that polaron effects will only increase m*, not decrease it, and in any event the band mass m* should be used for these measurements, not the polaron mass. The same criticisms apply to Berniecki's value [40] of m* approximately equal to 1.0 m e in BST.…”

Section: Effective Masses For Carriersmentioning

confidence: 81%

“…Dawber has shown that the dielectric constant of the metal electrodes must be taken as 1.0 for self-consistency in the Ku-Ullman theory (and certainly not the value of 100 used by Berniecki [40]), but that conclusion assumes that the ferroelectric is not semiconducting and hence that the interface capacitance arises entirely from the electron screening in the metal; to incorporate screening on both sides of the metal-ferroelectric interface Conway [41] uses a Helmholtz double-layer model to calculate the effective dielectric constant of 9.6 for a 0.5 nm thick double layer of semiconducting dielectric on metal electrode and 6.0 for a 0.3 nm thick double layer. In our own work we use this approach and calculate the zeta potential ζ = σd /εε 0 (6) of 0.8 eV, using a surface carrier density of σ = 2.8 × 10 18 m −2 electrons, a dielectric constant of 1300, and a Guoy screening length d of 20 nm.…”

Section: Helmholtz Double Layersmentioning

confidence: 99%

New developments on FRAMs: [3D] structures and all-perovskite FETs

Scott

2005

Materials Science and Engineering: B

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“…More recently it has been recognized that the understanding of this dead layer is also important for the understanding of the leakage currents. [8][9][10][11] In a two-capacitor model the contributions of interfacial layers, i , and film, B , can be separated for thickness series of thin films. This model assumes a bulk region of thickness t and permittivity B , and the two interface regions with thickness t i , which yield two capacitors of a lower permittivity i .…”

Section: Introductionmentioning

confidence: 99%

“…15 The presence of a dead layer is an important aspect in the understanding of this behavior as it yields an inhomogeneous distribution of the electric field: a large drop within the lowinterfacial layer and a smaller one within the high-film. 8,10 Most of the models for the leakage current concur that the Pt/BST interface forms a Schottky barrier whose barrier height is an important parameter. Nevertheless, the details on the dominating mechanism are under discussion: thermionic emission, field emission, tunneling, as well as the drift diffusion in the bulk.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

Ehrhart

Thomas

2006

Journal of Applied Physics

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Due to the dependence on both bulk and interface properties neither the effective dielectric constant nor the leakage current J can be scaled in a straightforward manner with film thickness for highthin film capacitors. Based on detailed investigations of different thickness series of ͑Ba, Sr͒TiO 3 films on platinized substrates the bulk and interfacial properties are separated. An approach to estimate the apparent interfacial layer thickness is discussed. The behavior of the leakage current is divided in two regions: for low voltages, ഛ1 V, the currents are very low, ഛ10−10 A/cm 2 , and dominated by the relaxation currents ͑Curie-von Schweidler behavior͒. At higher voltages the change to a very strong power law dependence is observed, J ϳ E 16 . The thickness dependence is removed by scaling with the internal field or dielectric displacement of the film, D = 0 E. Hence, a direct connection between the increase in and the increase in leakage with film thickness is revealed. This behavior is accompanied by a larger scatter of the data and seems to be controlled by a more inhomogeneous or local conductivity. Influences of the measuring temperature and of stoichiometry and interfacial properties are discussed.

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Erratum: “Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors” [J. Appl. Phys. 89, 2873 (2001)]

Cited by 17 publications

References 0 publications

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

New developments on FRAMs: [3D] structures and all-perovskite FETs

Electrical properties of (Ba,Sr)TiO3 thin films revisited: The case of chemical vapor deposited films on Pt electrodes

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