Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 5 1, 937 (1987)]

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

“…The energy of a particular luminescence transition depends on the relative spacing of the initial and final energy states. [52][1~ 451] Cathodoluminescence is similar to photoluminescence, except that the excited carriers are generated by an electron beam, allowing much finer lateral resolution and imaging. [ [532] (There are even different luminescence transitions for excitons bound to neutral impurities, which leave those impurities in excited states.)…”

Donor spectroscopy at large hydrostatic pressures and transport studies in compound semiconductors

“…These r-band donors have been thoroughly investigated by various characterization methods and their properties and behavior are by now understood quite well (Narita 1971, Bose 1987, Stillman 1994 . When sufficient hydrostatic pressure is applied, however, GaAs can be transformed into an indirect gap semiconductor (Yu…”

Magnetophotoluminescence study of excited states associated with donor bound excitons in high-purity GaAs

“…In Ref. 8 it was shown that the projection of the hole spin on the orbital angular momentum lϭ1 state results in two rotational states, one with a heavy-hole mass and a total angular momentum Jϭ 3 2 . This will be the lowest-energy rotational state.…”

“…Considering the energy ordering of all of the ground and excited states, the lϭ0 ground state will be the lowest. The (⌫ 8 ,Jϭ 3 2 ) heavyhole state will be next. The states associated with the lighthole, (⌫ 7 ,Jϭ 1 2 ) and (⌫ 6 ϩ⌫ 8 ,Jϭ 5 2 ), will be higher in energy.…”

“…[1][2][3][4][5] The optical transitions that were used to identify the residual donors result from the collapse of neutral donor bound excitons D 0 ,X. The exciton bound to the donor may be in the ground state D 0 ,X or in various excited states (D 0 ,X)* of the D 0 ,X complex.…”