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Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecularbeam epitaxial growth of InGaAs single quantum wells on GaAs Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecularbeam epitaxy J. Vac. Sci. Technol. B 6, 615 (1988); 10.1116/1.584413 Crystal orientations and defect structures of GaAs layers grown on misoriented Si substrates by molecularbeam epitaxy J.The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Halt-effect measurements show that the dominance of 8i donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.

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