Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs

Abstract

Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecularbeam epitaxial growth of InGaAs single quantum wells on GaAs Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecularbeam epitaxy J. Vac. Sci. Technol. B 6, 615 (1988); 10.1116/1.584413 Crystal orientations and defect structures of GaAs layers grown on misoriented Si substrates by molecularbeam epitaxy J.The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Halt-effect measurements show that the dominance of 8i donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.

Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

“…Diodes passivated with A1GaAs possessed an average ideality factor (q) of 2.8. This is in very good accord with the published figure of r I = 2.7 for AlGaAs-passivated GaAs lateral junctions [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. We postulate that extra recombination at the A1GaAs-GaAs boundary could be the cause of the high ideality factor.…”

“…However, the conductivity type for silicon doping on the (311)A surface is a function of the growth conditions. Under low As4: Ga flux ratio and high growth temperatures, p-type material is grown [7][8][9][10]. For the converse conditions, Si-doped (3 1 1)A material is rendered n-type.…”

Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy

“…Evidence is then given that the shallow acceptor responsible for the g emission band involves the majority (Be or C) acceptor species. 19 Moreover, the exciton is found more localized in the g bound exciton when comparing with the involved C The ground states calculated for (CAB,Nas) complexes with nitrogen impurity located at first or second neighbor (As)-sites, are respectively 22.41 and 22.99 meV, close to the experimental binding energy (En =22.9 meV) of the g acceptor complex defect. As the remaining bound exciton lines are detected at fixed energy positions that are not dependent upon the acceptor nature (C or Be), infering that the involved defects have no connection with these acceptor species.…”

Dynamics of free carriers – neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

“…Normally, Si in GaAs can be consider ed as an amphoteric impurity, which exhibits predominantly donor characteristics when embedded in GaAs grown by molecular beam epitaxy. However, depending on the GaAs growth conditions, there will always be a small part of Si atoms (8-20%) which become acceptors [18,19]. Using the relation τ e-D + = 1/(B D N D + ) the trapping time can be estimated to around 1 ns for the lower doped sample and around 0.5 ns for the higher doped Si sample.…”