Erratum: Landé<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>Factors and Orbital Momentum Quenching in Semiconductor Quantum Dots [Phys. Rev. Lett.<b>96</b>, 026804 (2006)]

Pryor, Craig; Flatté, Michael E.

doi:10.1103/physrevlett.99.179901

Cited by 93 publications

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“…1 The effect of envelope orbital momentum quenching was demonstrated in Ref. 5 for a spherical, unstrained InAs nanocrystal, by showing that the electron g factor approached the bare electron value of ∼ 2 much more quickly than would be expected from a parametrized bulk model based on Ref. 6.…”

Section: Introductionmentioning

confidence: 88%

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

et al. 2012

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The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelopefunction theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and the amplitude of those valence-state envelope functions that possess nonzero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

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Section: Introductionmentioning

confidence: 88%

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

et al. 2012

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“…[22] provided bowing parameters (for E g , , γ 3 − γ 2 , E p , E v , and a c ). The g factors were determined by computing the Zeeman energy splittings in a uniform magnetic field, coupled to both the Bloch and envelope functions [23,24]. Spurious midgap states [25,26] were eliminated by including an optimized second-nearest-neighbor term [27].…”

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Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

et al. 2016

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“…, l -2 , l . We use hw = 55 meV, m*=0.077m0 (m0 is the free electron mass), and g =1.2, which are reasonable values considering previous experiments.6,15, [26][27][28] The shifts of the PL lines with field are mainly governed by the FD spectrum of electrons. However, since the electron Zeeman splitting is small, the PL polarization is predomi nantly determined by the hole levels, as is explained in the following.…”

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confidence: 99%

Hole levels in InAs self-assembled quantum dots

et al. 2007

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We measure the energy levels and charging spectra of holes in self-assembled InAs quantum dots using capacitance-voltage and polarized photoluminescence spectroscopy in high m agnetic fields. The pronounced circular polarization of the optical emission, together with the optical selection rules for orbital and spin quantum numbers, allows us to separate the individual electron and hole levels. The magnetic field dependence of the single-particle hole energy levels can be understood by considering a spin-orbit coupled valence band and agrees well with the observed behavior of the charging peaks in the capacitance-voltage spectra.

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Erratum: LandégFactors and Orbital Momentum Quenching in Semiconductor Quantum Dots [Phys. Rev. Lett.96, 026804 (2006)]

Cited by 93 publications

References 0 publications

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

Hole levels in InAs self-assembled quantum dots

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