1998
DOI: 10.1103/physrevb.58.13276.2
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Erratum:NbSe3:Effect of uniaxial stress on the threshold field and fermiology [Phys. Rev. B57, 14 576 (1998)]

Abstract: Erratum: NbSe 3 : Effect of uniaxial stress on the threshold field and fermiology †Phys. Rev. B 57, 14 576 "1998… ‡

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“…Thus, it is considered that the pressure-induced magnetoresistance might result from carriers in pockets created by an imperfect nesting induced by pressure. Here, it should be emphasized that our explanation for the pressure-induced magnetoresistance is not inconsistent with changes in the Fermi surface associated with the chain corresponding to the T c1 -CDW, which has been pointed out in the NMR studies by Shi et al 17 and uniaxial stress studies under magnetic fields with fermiology changes by Kuh et al 18 …”
Section: Resultsmentioning
confidence: 70%
“…Thus, it is considered that the pressure-induced magnetoresistance might result from carriers in pockets created by an imperfect nesting induced by pressure. Here, it should be emphasized that our explanation for the pressure-induced magnetoresistance is not inconsistent with changes in the Fermi surface associated with the chain corresponding to the T c1 -CDW, which has been pointed out in the NMR studies by Shi et al 17 and uniaxial stress studies under magnetic fields with fermiology changes by Kuh et al 18 …”
Section: Resultsmentioning
confidence: 70%